An intrinsic Fabry-Perot interferometeric sensor based on a microfiber has been demonstrated. The micro-size suspended core is created by chemical etching a photonics crystal fiber, of which the cladding has a micrometer-spaced, hexagonal array of air holes. The sensing head is fabricated by chemical etching a short section of photonics crystal fiber spliced with a single mode fiber. The temper...

Homoepitaxial bulk 4H SiC-off-axis commercial wafers were investigated after in situ hydrogen etching on a hot wall chemical vapor deposition (HWCVD).We have performed test etching on several process conditions in order to study the surface defects reduction or transformation. A detailed map of bulk defects has been obtained by optical microscopy inspection to mark interesting position of inves...

The influence of the nucleation process of Ag particles on the formation of Si nanowire arrays is investigated by two-stage electroless chemical etching. The dimensions of the Ag particles formed in the first stage of the process play an important role in the formation of the Si nanowires. The nucleation and etch result are analysed using SEM. The electrical properties of the resulting Si NW ar...

Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 μm/mi...

We demonstrate GaAs pillar array-based light emitting diodes (LEDs) with axial p-in junctions fabricated using a room-temperature metal-assisted chemical etching (MacEtch) method. Variations in vertical etch rates for all three doping types of GaAs are investigated as a function of etching temperature, oxidant/acid concentration ratio, and dilution of the etching solution. Control over nanopill...

Wet-chemical etching of the barrier oxide layer of anodic aluminum oxide (AAO) was systematically investigated by using scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), and a newly devised experimental setup that allows accurate in situ determination of the pore opening point during chemical etching of the barrier oxide layer. We found that opening of the barrier oxid...