this study was designed to develop a modified tbi weight drop model for induction of focal mild cerebral injury. a stereotaxic coupled weight drop device was designed. principle arm of device carries up to 500g weights which their force was conveyed to animal skull through a thin nail like metal tip. to determine the optimal configuration of the device to induce mild tbi, six different trials w...

in this study we investigate the effect of atoms such as b, n, ge and sn on the optical and the electrical properties of capped (5, 0) zigzag carbon nanotube, using dft calculation method. these elements were attached to the one end of the carbon nanotube. we considered four different structure designs as possible candidates for a p-n junction device. the electrical properties of these structur...

This paper demonstrates a fully-silicided ESD protection device design in sub-100nm integrated circuits. No drain ballast resistor required is the most significant feature that makes the new device differ form the conventional ones. Accordingly, a simplified manufacturing process and a reduced device area could be obtained simultaneously. It is believed that the achievements are caused from the...

We study the system of self-dual Maxwell field coupled to 3D gravity with torsion, with Maxwell field modified by a topological mass term. General structure of the field equations reveals a new, dynamical role of the classical central charges, and gives a simple correspondence between self-dual solutions with torsion and their Riemannian counterparts. We construct two exact self-dual solutions,...

Title of Thesis: CHARACTERIZATION OF 4H-SiC MOSFETs USING FIRST PRINCIPLES COULOMB SCATTERING MOBILITY MODELING AND DEVICE SIMULATION Siddharth Potbhare Master of Science, 2005 Thesis directed by: Professor Neil Goldsman Department of Electrical and Computer Engineering Detailed analysis of a 4H-SiC MOSFET has been carried out by numerically solving the steady state semiconductor Drift-Diffusio...

Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar heterojunctions. In the process of investigating scaling properties of gate-stacks consisting atomic-layer deposited Al2O3/III-Nitride heterojunctions, we find interface charges that appear closely linked to the polarization charges of the unde...

Defocusing effects in modulation transfer function (MTF) measurement of charge coupled device (CCD) cameras is the main focus of current paper. We introduce measuring Point-spread function (PSF) in order to calculate the MTF and further more we will study the shape of MTF and its cut-off frequency by adjusting the lens focusing in different locations. A collimated white light LED by broadband s...