Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current transients and by comparing the experimental regimes of the perpendicular and parallel injection of ...

PURPOSE The aim of this randomized, controlled, blinded clinical study was to compare ridge dimensions and histologic characteristics of ridges preserved with 2 different graft materials. MATERIALS AND METHODS Twenty-four subjects, each requiring a nonmolar extraction and delayed implant placement, were randomly selected to receive ridge preservation treatment with either an allograft in an e...

A range of high performance minority carrier devices have been successfully fabricated on Si “virtual” substrates where threading dislocation densities (TDDs) as low as 1x10 cm are routinely achieved. Minority carrier lifetime data achieved on GaAs-on-Si layers exploiting this novel SiGe buffer approach to monolithic integration (τp = 10.5 ns and τn = 1.7ns) verifies the high III-V material qua...

Materials research with a focus on enhancing the minority-carrier lifetime of the light-absorbing semiconductor is key to advancing solar energy technology for both early-stage and mature material platforms alike. Tin sulfide (SnS) is an absorber material with several clear advantages for manufacturing and deployment, but the record power conversion efficiency remains below 5%. We report measur...

berberine was loaded in yeast cells of saccharomyces cerevisiaeas a novel pharmaceutical carrier to improve the treatment ofmany diseases. the yeast-encapsulated active materialsshowedhigh stability and bioavailability due to the enhanced solubility and sustained releasing. in this study, different characteristics of prepared berberine loaded yeast cells (loading capacity, release kinetic order...

Indium arsenide (InAs) is a direct bandgap semiconductor (Eg 1⁄4 0.36 eV) and is well suited for non-linear optic (NLO) applications. The NLO applications require high linear optical transmission for below-bandgap energy photons in the material. Due to this stringent criterion, there is a need for understanding the fundamental optical absorption mechanisms in the material as well as correlating...

The evolution of the pulse centroid velocity of the Poynting vector for both ultrawideband rectangular and ultrashort Gaussian envelope pulses is presented as a function of the propagation distance in a dispersive, absorptive dielectric material. The index of refraction of the material is described by the Lorentz-Lorenz formula in which a single-resonance Lorentz model is used to describe the m...