نتایج جستجو برای: carrier density

تعداد نتایج: 477152  

2016
Jialin Zhao Meng Wang Hui Li Xuefu Zhang Lixing You Shan Qiao Bo Gao Xiaoming Xie Mianheng Jiang

We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate. It can induce a change in the carrier density as large as 1 × 1014 cm-2, which is much larger than that induced with oxide-film dielectrics, and it is comparable with that...

Journal: :Physical review letters 2008
Enrico Rossi S Das Sarma

We calculate the carrier-density-dependent ground-state properties of graphene in the presence of random charged impurities in the substrate taking into account disorder and interaction effects nonperturbatively on an equal footing in a self-consistent theoretical formalism. We provide detailed quantitative results on the dependence of the disorder-induced spatially inhomogeneous two-dimensiona...

Journal: :Microelectronics Journal 2003
F. V. de Sales Júnio Márcio Rosa Cruz Sebastião William da Silva M. A. G. Soler Paulo César de Morais M. J. da Silva A. A. Quivy J. R. Leite

We have investigated the quantum dot (QD) carrier capture mechanism using continuous wave photoluminescence as a function of the optical excitation intensity using a sample with a QD density gradient across its surface ranging from 0 to 1.8 £ 10 cm. Modelling of the carrier kinetics has been described by a set of three coupled rate equations associated with the carrier population in the GaAs ba...

Journal: :ACS nano 2014
Zhaogang Nie Run Long Linfeng Sun Chung-Che Huang Jun Zhang Qihua Xiong Daniel W Hewak Zexiang Shen Oleg V Prezhdo Zhi-Heng Loh

Femtosecond optical pump-probe spectroscopy with 10 fs visible pulses is employed to elucidate the ultrafast carrier dynamics of few-layer MoS2. A nonthermal carrier distribution is observed immediately following the photoexcitation of the A and B excitonic transitions by the ultrashort, broadband laser pulse. Carrier thermalization occurs within 20 fs and proceeds via both carrier-carrier and ...

1999
Joachim Piprek Patrick Abraham John E. Bowers

We investigate quantum efficiency limitations in InGaAsP/InP multiquantum-well ~MQW! laser diodes emitting at 1.5 mm. At room temperature, the internal differential efficiency above threshold is found to be reduced mainly by increasing Auger recombination and spontaneous emission within the quantum wells. These carrier loss increments are commonly assumed negligible due to MQW carrier density c...

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