---A novel two zone step doped (TZSD) lateral bipolar junction transistor (LBJT) on silicon-oninsulator (SOI) with buried oxide thick step (BOTS) is proposed. The concept of linear doping and linear oxide thickness for increasing the breakdown voltage has been replaced by using step in doping and step in oxide thickness. These steps result in the creation of additional electric field peaks in t...

The current responses of human erythrocyte and L-cell membranes being subject to rectangular voltage pulses of 150-700 mV amplitude and 5 X 10(-3)-10 s duration were recorded by means of the patch-clamp method. The behaviour of planar lipid bilayer membranes of oxidized cholesterol and UO2(2+)-modified bilayers of azolectin in a high electric field was investigated for comparison. The gradual g...

In this paper, the breakdown characteristic of 4H-SiC pn diode using Internal Ring(IR) termination technique is investigated. N-type 4H-SiC wafer having a 10um epilayer with a doping concentration of 5.4×10 15 /cm 3 was used to fabricate the pn diodes with one or two IRs. IR was formed by boron implantation of single energy of 360keV with 5×10 14 /cm 2 dose and activation annealing at 1700 o C ...

This innovation is a lightweight, small sensor for inert gases that consumes a relatively small amount of power and provides measurements that are as accurate as conventional approaches. The sensing approach is based on generating an electrical discharge and measuring the specific gas breakdown voltage associated with each gas present in a sample. An array of carbon nanotubes (CNTs) in a substr...

In samples used to maintain the US resistance standard the breakdown of the dissipationless integer quantum Hall effect occurs as a series of dissipative voltage steps. A mechanism for this type of breakdown is proposed, based on the generation of magneto-excitons when the quantum Hall fluid flows past an ionised impurity above a critical velocity. The calculated generation rate gives a voltage...

The breakdown characteristics of an avalanche photodiode (APD) are generally assessed by examining the steepness of the breakdown-probability curve as a function of the normalized excess breakdown voltage, ∆V /V BR , which is the voltage beyond the breakdown voltage, V BR , normalized by the breakdown voltage. This metric indicates how quickly the transition from stable operation (finite gain) ...

Combination of high-mean free path and scaling ability makes graphene nanoribbon (GNR) attractive for application of field-effect transistors and subject of intense research. Here, we study its behaviour at high bias near and after electrical breakdown. Theoretical modelling, Monte Carlo simulation, and experimental approaches are used to calculate net generation rate, ionization coefficient, c...

This version is made available in accordance with publisher policies. Please cite only the published version using the reference above. The slow ramp current-voltage characteristics of NH3-plasma-nitrided samples of thermally grown chlorine SiO2, d = 200-350 ~, have been measured and the breakdown voltage statistics determined. The characteristics of the breakdown voltage distribution of a doub...

The dependence of the impulse electrical strength of water on conductivity was investigated in non-uniform electric field point-plate electrode system. The voltage pulses, with the rise time t,=l ps, and time to half-decay tuz= 30 ps, were generated by a Marx bank. Conductivity was varied by the use of different CuSO4 concentrations in distilled water. The voltage and current during the electri...

We report AlxIn1-xAsySb1-y PIN and Separate Absorption, Charge and Multiplication (SACM) avalanche photodiodes (APDs) with high temperature stability. This work is based on measurements of avalanche breakdown voltage of these devices for temperatures between 223 K and 363 K. Breakdown voltage temperature coefficients are shown to be lower than those of APDs fabricated with other materials with ...