We have studied the stability of domains and domain walls in multiferroic BiFeO3 thin films using a combination of piezoelectric force microscopy and phase-field simulations. We have discovered that a film-substrate misfit strain may result in a drastically different thermodynamic stability of two parallel domain walls with the same orientation. A fundamental understanding of the underlying phy...

For epitaxial films, a critical thickness (tc) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO3/SrRuO3/SrTiO3 substrate. We found larger Fe cation displacemen...

The electric field control of functional properties is an important goal in oxide-based electronics. To endow devices with memory, ferroelectric gating is interesting, but usually weak compared to volatile electrolyte gating. Here, we report a very large ferroelectric field-effect in perovskite heterostructures combining the Mott insulator CaMnO3 and the ferroelectric BiFeO3 in its "supertetrag...

We demonstrate a direct correlation between the domain structure of multiferroic BiFeO3 thin films and exchange bias of Co 0.9Fe 0.1/BiFeO3 heterostructures. Two distinct types of interactions - an enhancement of the coercive field ( exchange enhancement) and an enhancement of the coercive field combined with large shifts of the hysteresis loop ( exchange bias) - have been observed in these het...

Multiferroic (MF) materials exhibit a highly coupled, spontaneous ferroelectric polarization and magnetization. Coupling between electrical and magnetic properties in multiferroic materials makes them a promising material for the design of multifunctional device applications, but also because of the interesting physics found in this class of materials. The role or absence of phonon softening in...

To date, electric fields have been widely used to control the magnetic properties of BiFeO3-based antiferromagnet/ferromagnet heterostructures through application of an exchange bias. To extend the applicability of exchange bias, however, an alternative mechanism to electric fields is required. Here, we report the photo-control of exchange bias in BiFeO3/La2/3Sr1/3MnO3 thin films on an SrTiO3 s...

We report a potential way to enhance and tune the multiferroic and resistive switching properties of BiFeO3 nanoparticles through dilute aliovalent Li(1+) doping (0.046 atomic percent) at the Fe(3+) sites of BiFeO3. The high purity of the samples and the extent of doping were confirmed by different physical characterizations. Enhanced multiferroic properties with a magnetic moment per Fe atom ≈...

This work reports the effect of Ti diffusion on the bipolar resistive switching in Au/BiFeO3/Pt/Ti capacitor-like structures. Polycrystalline BiFeO3 thin films are deposited by pulsed laser deposition at different temperatures on Pt/Ti/SiO2/Si substrates. From the energy filtered transmission electron microscopy and Rutherford backscattering spectrometry it is observed that Ti diffusion occurs ...

A wealth of fascinating phenomena have been discovered at the BiFeO3 domain walls, examples such as domain wall conductivity, photovoltaic effects, and magnetoelectric coupling. Thus, the ability to precisely control the domain structures and accurately study their switching behaviors is critical to realize the next generation of novel devices based on domain wall functionalities. In this work,...

The clear understanding of exchange interactions between magnetic ions in substituted BiFeO3 is the prerequisite for the comprehensive studies on magnetic properties. BiFe0.5Mn0.5O3 films and BiFeO3/BiMnO3 superlattices have been fabricated by pulsed laser deposition on (001) SrTiO3 substrates. Using piezoresponse force microscopy (PFM), the ferroelectricity at room temperature has been inferre...