AbstructA novel BiCMOS full-swing circuit technique with superior performance over CMOS down to 1.5 V is proposed. A conventional noncomplementary BiCMOS process is used. The proposed pull-up configuration is based on a capacitively coupled feedback circuit. Several pull-down options were examined and compared, and the results are reported. Several cells were implemented using the novel circuit...

A new architecture of simple low voltage BiCMOS fourquadrant multiplier is proposed and analyzed. It operates with ±1.5V power supplies and 3Vp-p fully input signal swings. Simulation results based on AMS 0.8μm n-well BiCMOS process parameters are given to verify the theoretical analysis. The architecture of four multipliers typically have a nonlinearity error less than 1% over ±1.5V input rang...

An LNA design and simulation using ED02AH Technology in 0.2-μm GaAs Pseudomorphic HEMT process and 0.35-μm HBT SiGe BiCMOS process are reported as a case of comparison. This work uses an identical circuit topology for both processes which is a 3-volt two stage cascode single-ended topology with a resistive shunt feedback. This LNA is developed for 2.4 GHz ISM band applications. This letter desc...

Abstract — Improvements of Silicon technology in CMOS and BiCMOS process, is nowadays showing very interesting intrinsic characteristics. Circuit ideas and topologies are improved more and more to fit the industrial needs. Our design is a 2 GHz BiCMOS process filter based on a LC-Q enhanced topology. With a power supply of 2.7 V, the circuit consumes less than 6.1 mA. It shows at the centre fre...

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In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-...

This paper presents the analysis, design and implementation of a millimeter-wave W-band power detector. Fabricated in a 0.18-μm SiGe BiCMOS technology, the detector circuit exhibits a responsivity of 91 kV/W, a noise equivalent power of 0.5 pW/Hz, and a noise figure of 29 dB. The power dissipation of the detector is 75 μW. Reasonable agreement between simulations and measurements is obtained. T...

An 8-10 GHz X-band upconversion quadrature mixer stage implemented in 250 nm SiGe BiCMOS is presented. Orthogonality of the spurious responses caused by clock feed through, I/Q mismatch and baseband harmonics after self-mixing was exploited to realize a baseband calibration scheme reducing all in-band spurs down to below -73dBc, for baseband signals up to a bandwidth of 2MHz and with an IF cent...