In a joint experimental and theoretical study, we investigate the bias-voltage dependence of the tunnel magnetoresistance (TMR) through a vacuum barrier. The TMR observed by spin-polarized scanning tunneling microscopy between an amorphous magnetic tip and a Co(0001) sample is almost independent of the bias voltage at large tip-sample separations. Whereas qualitative understanding is achieved b...

this paper presents density functional theory and non-equilibrium green’s function based first principles calculations to explore the sensing property of adenine and thymine based hetero-junction chins for ammonia and phosphine gas molecules. this modeling and simulation technique plays an important and crucial role in the fast growing semiconductor based nanotechnology field. the hetero-juncti...

Threshold voltage shifts associated with negative gate bias temperature instability in p-channel power VDMOSFETs under the static and pulsed stress conditions are analysed in terms of the effects on device lifetime. The pulsed bias stressing is found to cause less significant threshold voltage shifts in comparison with those caused by the static stressing, which is ascribed to the effects of dy...

I hereby declare that I am the sole author of this thesis. This is a true copy of the thesis, including any required final revisions, as accepted by my examiners. I understand that my thesis may be made electronically available to the public. Abstract This thesis presents a study of the bias-induced threshold voltage metastability phenomenon of the hydrogenated amorphous silicon (a-Si:H) thin f...

Cu thin films have been deposited on Si (100) substrate by using a non-mass-separated ion beam deposition (IBD) system. The effect of the substrate bias voltage on the properties of the deposited films was investigated using X-ray diffraction, resistivity measurement and field emission scanning electron microscopy. In the case of Cu thin films deposited without bias voltage, a columnar structur...

We report the fabrication and characterization of light-emitting transistors incorporating individual cadmium selenide (CdSe) nanocrystals. Electrical measurements conducted at low bias voltage and low temperature show clear evidence of Coulomb blockade behavior, indicating that electrons pass through the nanocrystal by single-electron tunneling. Once the bias voltage exceeds the band gap of Cd...

A minority-spin resonant state at the Fe/GaAs(001) interface is predicted to reverse the spin polarization with the voltage bias of electrons transmitted across this interface. Using a Green's function approach within the local spin-density approximation, we calculate the spin-dependent current in a Fe/GaAs/Cu tunnel junction as a function of the applied bias voltage. We find a change in sign o...

We present measurements at 10.6 microm that demonstrate electronic tuning of the polarization response of asymmetric-spiral infrared antennas connected to Ni-NiO-Ni diodes. Continuous variation of the bias voltage applied to the diode results in a rotation of the principal axis of the polarization ellipse of the spiral antenna. A 90 degrees tuning range is measured for a bias voltage that varie...

We evaluate the performance of an 8 × 8 array of 0.9 × 0.9 × 1 mm 3 cerium doped lutetium oxyothosilicate (LSO) crystals coupled to a position sensitive avalanche photodiode (PS-APD) as a function of bias voltage and temperature. We use this detector to develop a general methodology to optimize bias voltage, temperature, and gain for PET detectors using semiconductor photodetectors. This detect...