نتایج جستجو برای: band gap engineering

تعداد نتایج: 516322  

پایان نامه :دانشگاه تربیت معلم - تهران - دانشکده علوم 1393

in this thesis, structural, electronical, and optical properties of inverse pervskite(ca3pbo) in cubic phase have been investigated.the calculation have been done based on density functional theory and according to generalized gradiant approximate (gga) as correlating potential. in order to calculate the configurations, implementing in the wien2k code have been used from 2013 version. first of ...

Journal: :IOP Conference Series: Earth and Environmental Science 2017

2014
W. Hourani E. Martinez P. Periwal G. Patriarche F. Bassani J. M. Fabbri T. Baron

Si/Si1-xGex axial heterostructured nanowires (hNW) are under investigation for downscaling of metaloxide-semiconductor field-effect transistors (MOSFETs). New architectures based on vertically aligned nanowires tunnel-FETs are promising candidates for reduced power dissipation and low voltage operation [1]. The axial growth of lattice mismatched heterostructures would allow band-gap engineering...

Journal: :Physical chemistry chemical physics : PCCP 2011
Dong-Meng Chen Prathamesh M Shenai Yang Zhao

Opening up a band gap in graphene holds a crucial significance in the realization of graphene-based electronics. Doping with organic molecules to alter the electronic properties of graphene is perceived as an effective band gap engineering approach. Using the tight binding model, we examined the band gap opening of monolayer graphene due to the adsorption of pyrene molecules on both of its side...

2013
S. Assali I. Zardo S. Plissard D. Kriegner M. A. Verheijen G. Bauer A. Meijerink A. Belabbes F. Bechstedt J. E. M. Haverkort E. P. A. M. Bakkers

The main challenge for light-emitting diodes is to increase the efficiency in the green part of the spectrum. Gallium phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the green emission efficiency. Band structure calculations have predicted a direct band gap for wurtzite GaP. Here, we report the fabrication of GaP nanowires with pure hexago...

2015
Kanchan Cecil Jawar Singh

This paper projects the enhanced drive current of a ntype electrostatically doped (ED) tunnel field-effect transistor (ED-TFET) based on heterojunction and band-gap engineering via TCAD 2-D device simulations. The homojunction ED-TFET device utilizes the electrostatic doping in order to create the source/drain region on an intrinsic silicon nanowire that also felicitates dynamic re-configurabil...

پایان نامه :وزارت علوم، تحقیقات و فناوری - پژوهشگاه دانشهای بنیادی (مرکز تحقیقات فیزیک نظری و - پژوهشکده علوم نانو 1392

among the low–dimensional allotropes of carbon, nanotubes and graphene have attracted very much attention from nano–science and nanotechnology specialists. they have been proposed as building blocks in nanometer device engineering. however, these structures are not defect–free. in this thesis, we focused on defective carbon nanotubes and graphene, and studied the effect of couple of very common...

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