We present a modeling scheme for simulating ballistic hole transport in thin-body fully depleted silicon-on-insulator pMOSFETs. The scheme includes all of the quantum effects associated with hole confinement and also accounts for valence band nonparabolicity approximately. This simulator is used to examine the effects of hole quantization on device performance by simulating a thin (1.5-nm) and ...

Ballistic transport of electrons at room temperature in top-gated InAs nanowire (NW) transistors is experimentally observed and theoretically examined. From length dependent studies, the low-field mean free path is directly extracted as ~150 nm. The mean free path is found to be independent of temperature due to the dominant role of surface roughness scattering. The mean free path was also theo...

In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...

We ana/lyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3d5s* tight-binding treatment of the electronic structure. Comparison of the measured performance of the device with the effects of series resistance removed to the simulated result assuming ballistic transport shows that the experimental device opera...

Finite element analysis was used to investigate the impact behavior of the foam-cored sandwich shells under the ballistic impact. The ballistic limit, failure mode of the face-sheet and energy absorption of the uniform/graded core were discussed in this paper. Based on the impact phase diagrams, the effects of several factors (i.e. projectile shape and diameter, face-sheet curvature and thickne...

As know, a ballistic MOS-Like carbon nanotube FET can be simulated by using a self-consistent procedure between the charge and the Poisson equations. Because of the integral form of the charge equation, this model cannot be implemented in the commercially available circuit simulators, such as SPICE. In this paper, we propose an analytical solution for estimating the charge equation, so that the...

We consider a deposition model in which balls rain down at random towards a 2-dimensional surface, roll downwards over existing adsorbed balls, are adsorbed if they reach the surface, and discarded if not. We prove a spatial law of large numbers and central limit theorem for the ultimate number of balls adsorbed onto a large toroidal surface, and also for the number of balls adsorbed on the res...