in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...

in this paper, we calculate electron and hole impactionization coefficients in in0.52al0.48as using a monte carlo modelwhich has two valleys and two bands for electrons and holesrespectively. also, we calculate multiplication factor for electronand hole initiated multiplication regimes and breakdown voltagein in0.52al0.48as pin avalanche photodiodes. to validate themodel, we compare our simulat...

We show that some widely accepted criteria for cryptographic functions, including the strict avalanche criterion (SAC) and the propagation criterion, have various limitations in capturing properties of vital importance to cryptographic algorithms, and propose a new criterion called GAC to measure the global avalanche characteristics of cryptographic functions. We also introduce two indicators r...

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy dur...

The surficial deposits surrounding the Mount Meager volcanic complex include numerous avalanche deposits. These deposits share many attributes: (a) they are nearly monolithologic and comprise mainly intermediate volcanic rock clasts, (b) they lack internal structure, and (c) they are very poorly sorted. Despite these similarities, the avalanche deposits represent two distinct processes. Mass wa...

Two-tone intermodulation in ultrahigh vacuum/chemical vapor deposition SiGe heterojunction bipolar transistors (HBTs) were analyzed using a Volterra-series-based approach that completely distinguishes individual nonlinearities. Avalanche multiplication and collector–base (CB) capacitance were shown to be the dominant nonlinearities in a single-stage common-emitter amplifier. At a given , an opt...

A novel device which combines advantages of Silicon Drift Detector and Silicon Avalanche Diode on the same silicon wafer is proposed. Avalanche ampliication is applied to cloud of drifting electrons in order to improve detection of radiation with low energy deposition coeecient. Principle and optimal conditions for the operation of this new detector based on Avalanche Ampliier are discussed.

A necessary and sufficient condition on the Walsh-spectrum of a boolean function is given, which implies that this function fulfills the Strict Avalanche Crit,erion. This condition is shown to be f W e d for a class of functions exhibiting simple spectral symmetries. Finally, an extended definition of the Strict Avalanche Criterion is proposed and the corresponding spectral characterization is ...

The currently adopted approach to avalanche hazard mapping in northern Italy includes avalanche dynamic modelling, coupled with statistical analysis of snow depth at avalanche start. The 30-years and 300-years return period avalanches at a given site are modelled and their run out zone and pressure are evaluated. The snow depth in the avalanche release zone is assumed to coincide with the three...

Novel theory is developed for the avalanche multiplication process in avalanche photodiodes (APDs) under time-varying reverse-biasing conditions. Integral equations are derived characterizing the statistics of the multiplication factor and the impulse-response function of APDs, as well as their breakdown probability, all under the assumption that the electric field driving the avalanche process...