A highly ordered microscale Ge inverted pyramid array is fabricated by HF-free metal-assisted chemical etching. Doping in the structure significantly modifies reflection behavior mid-infrared region.

In the current study, monocrystalline silicon nanowire arrays (SiNWs) were prepared through a metal-assisted chemical etching method of silicon wafers in an etching solution composed of HF and H2O2. Photoelectric properties of the monocrystalline SiNWs are improved greatly with the formation of the nanostructure on the silicon wafers. By controlling the hydrogen peroxide concentration in the et...

Cl2, Br2, HBr, Br2/Cl2, and HBr/Cl2 feed gases diluted in Ar (50%–50% by volume) were used to study etching of p-type Si(100) in a rf inductively coupled, Faraday-shielded plasma, with a focus on the photo-assisted etching component. Etching rates were measured as a function of ion energy. Etching at ion energies below the threshold for ion-assisted etching was observed in all cases, with Br2/A...

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A highly ordered and damage-free microscale Ge inverted pyramid array is fabricated by HF-free metal-assisted chemical etching. The exhibits significant broadband antireflection properties in the mid-infrared region.

Well-ordered tilted silicon nanobelt arrays have been fabricated over a large area (≥2.5 cm(2)) by metal assisted chemical etching of pre-patterned silicon, which demonstrated markedly enhanced solar hydrogen evolution performance, compared with planar silicon of the same type and previously reported silicon nanowires prepared in a similar way.

In this work, we introduce a maskless, resist-free rapid prototyping method to fabricate three-dimensional structures using electron beam induced deposition (EBID) of amorphous carbon (aC) from a residual hydrocarbon precursor in combination with metal-assisted chemical etching (MaCE) of silicon. We demonstrate that EBID-made patterned aC coating, with thickness of even a few nanometers, acts a...