This study reports piezoelectric properties and crystallographic microstructures of aluminium nitride (AlN, wurtzite structure) thin films on 50 μm thick stainless steel foil. The transverse piezoelectric coefficient d31,f and e31,f of 10 μm thick AlN films were estimated as -1.42 ± 0.08 pm/V and -0.48 ± 0.03 C/m 2 from a tip displacement of the piezoelectric cantilevers. Dielectric constant ε3...

Abstract: In this paper, a comparative study of different high-k dielectric materials based on tunneling current density has been deployed. The various types of high-k dielectric materials such as aluminium oxide, hafnium oxide, silicon nitride are compared using Schrödinger equation. The analytical model of tunneling current density has been computed using WKB approximation method. The simulat...

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This paper describes how capacitance–voltage (C-V) and Kelvin probe (KP) measurements can be combined to determine the magnitude and centroid of the electric charge in a thin-film insulator. The technique is demonstrated on three films of relevance to silicon solar cells: aluminium oxide, amorphous silicon nitride and silicon dioxide. Since the charge within these films is of different magnitud...

Bulk aluminium nitride (AlN) is a very promising substrate material for UV optoelectronics based on AlGaN ternary compounds. AlN single crystals exceeding 1'' in diameter can now be grown by physical vapour transport (PVT). UV transparency is of high interest for UV devices designed to emit through the substrate. We report on 500 μm thick bulk AlN substrates with plain UV transmittance of 50% (...