Using inductively-coupled-plasma reactive ion etching (ICP-RIE), recessed 1 mm gate-length enhancement-mode (E-mode) AlGaN=GaN high electron mobility transistors (HEMTs) were fabricated. These 1 mm gate-length devices exhibited maximum drain current density of 470 mA=mm, extrinsic transconductance of 248 mS=mm and threshold voltage of 75 mV. These characteristics are much higher than previously...

Undoped GaN-based metal-oxide-semiconductor high-electron-mobility-transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 μm up to 40 μm. With a two-dimensional numerical simulator, we report simulation results of the GaN-based MOS-HEMTs using field-dependent drift velocity model. A developed model, taking into account polarization-induc...

and Introduction: This project focused on the preparation of high electron mobility transistors (HEMTs) and the design of a HEMTbased, single-lithography-layer oscillator with active integrated antenna circuit with target oscillation frequencies up to 100 GHz. HEMT devices are well known for their suitability in high frequency microwave circuits, possibly for two reasons. Firstly, HEMTs offer h...

Undoped GaN-based metal-oxide-semiconductor high-electron-mobility transistors MOS-HEMTs with atomic-layer-deposited Al2O3 gate dielectrics are fabricated with gate lengths from 1 up to 40 m. Using a two-dimensional numerical simulator, we report the results of self-heating simulations of the GaN-based MOS-HEMTs, including hot electron and quantum effects. The simulated electrical characteristi...

AlGaN/GaN HEMTs devices are studied intensely because of its ability of operation at higher voltage with higher power density. As the study progress, it is realized that the reliability of the fabricated device is a quite important issue. From the reliability study of AlGaN/GaN HEMTs, it is found that the current degradation has relationships with the isolation structure. In this paper, the dif...

The effect of donor-like surface traps on two-dimensional electron gas (2DEG) and drain current collapse of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated in detail. The depletion of 2DEG by the donor-like surface states is shown. The drain current collapse is found to be more sensitive to the addition of positive surface charges. Surface trap states with higher ener...

AlGaN/GaN high electron mobility transistors (HEMTs) are very promising for high power applications at microwave frequencies. The heterostructures are usually grown on SiC or sapphire substrates. Sapphire substrates are relatively cheap, but their low thermal conductivity is a major disadvantage. To improve the thermal performance, a hybrid integration of the HEMT onto an AlN carrier substrate ...

This paper describes an extensive study of the reversebias degradation of AlGaN/GaN-based High Electron Mobility Transistors. The analysis was carried out by means of combined electrical characterization and timeresolved electroluminescence measurements. Results indicate that: (i) AlGaN/GaN HEMTs can degrade even below the “critical voltage” identified by means of stepstress experiments. (ii) d...

We present results of an experimental and theoretical study of the temperature dependence of the off-state breakdown voltage of InAlAsDnGaAs high electron mobility transistors (HEMTs). We find that the breakdown voltage (BV) has a negative temperature coefficient that is more prominent for lower values of the extrinsic sheet carrier concentration (nJ. Structural parameters such as the insulator...

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electronmobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standar...