نتایج جستجو برای: al ag
تعداد نتایج: 483484 فیلتر نتایج به سال:
Bactericidal action of Al(2)O(3), Ag/Al(2)O(3) and AgCl/Al(2)O(3) on pure culture of Escherichia coli K 12 was studied. Ag/Al(2)O(3) and AgCl/Al(2)O(3) demonstrated a stronger bactericidal activity than Al(2)O(3). The colony-forming ability of E. coli was completely lost in 0.5 min on both of Ag/Al(2)O(3) and AgCl/Al(2)O(3) at room temperature in air. The configuration of the bacteria on the ca...
For n-type solar cell concepts, B emitters are commonly diffused in a BBr3-based process. However, the metallization of these p layers is challenging. Up to now, low contact resistances on B emitters were only reported to be possible using Al-containing Ag screen-printing pastes. A drawback of the addition of Al to the paste is that, facilitated by the Al, deep metal spikes grow into the Si sur...
The effects of Ag, Co, and Ge additions on microstructure mechanical properties Be-35Al (wt.%) alloys fabricated by investment casting were studied. results reveal that the trace metals 1.5wt.% 0.7wt.% 0.8wt.% do not change nucleation temperature Be phase. However, Al phase decreases from 642 °C to 630 DSC due addition. strength sharply increases dissolution Ag solutes into Co characterized SEM...
The E587 antigen (Ag) is a 200-Kd membrane glycoprotein originally identified by a monoclonal antibody on new and regenerating retinal ganglion cell axons in the adult goldfish. We report the isolation of cDNAs encoding the E587 Ag and identify it as a member of the L1 family of cell adhesion molecules (CAMs). The predicted amino acid sequence of E587 Ag shows an approximately equal identity (4...
In this study we investigate metal spike formation of screen-printed Ag/Al pastes during contact firing in an infrared belt furnace and its influence on the characteristics of n-type bi-facial silicon solar cells. The boron emitters are formed in a co-diffusion step using boron doped PECVD layers. It is demonstrated that the formation of Ag/Al spikes results in strong FF and VOC losses limiting...
The basic requirements of the CdS thin films on their applications are high optical transparency, low electrical resistivity, and better crystalinity (e.g.high orientation). Firstly, we prepared CdS films by thermal eveporation techniques on glass substrate and then studied their photoconductivity from room temperature to 200 . Secondly, we prepared CdS films with impurities of Cu, Ag, Au and...
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