نتایج جستجو برای: مدلهای تجاریسازی stage gate
تعداد نتایج: 401427 فیلتر نتایج به سال:
Current research has found conflicting results regarding the relationship between maximal oxygen uptake ((Equation is included in full-text article.)) and the repeated sprint ability (RSA) of hockey players. The purpose of this study was to use sport-specific testing methods to investigate this relationship. Forty-five (range, 18-24) college hockey players completed a graded exercise test on a ...
Influence of Mg doping level at the initial growth stage on the gate reliability of p-GaN gate HEMTs
Abstract This letter has studied the gate reliability of p-GaN high electron mobility transistors (HEMTs) influenced by Mg doping level at initial growth stage layer. Normally-off HEMTs with fabricated relatively low and concentration have been analyzed compared based on their performances various statuses as-fabricated, forward step-stressed, reverse step-stressed long-term stressed. It reveal...
In this paper, a fine-grained power gating technique for an asynchronous-logic pipeline stage is proposed using locally controlled gating transistors. Pipeline stage in the AFPL circuit is consisting of positive feedback adiabatic logic (PFAL) gates that implement the logic function of the stage, and a handshake controller, that handles handshaking with the neighboring stages and gives power to...
application of quantum-dot is a promising technology for implementing digital systems at nano-scale. quantum-dot cellular automata (qca) is a system with low power consumption and a potentially high density and regularity. also, qca supports the new devices with nanotechnology architecture. this technique works based on electron interactions inside quantum-dots leading to emergence of quantum ...
هدف: در این مطالعه به بررسی ارتباط ki-67 با stage سرطان سینه در بیمارستان بوعلی طی سالهای 90-1389 پرداختیم. روش مطالعه: در این مطالعه توصیفی – تحلیلی مقطعی، 144 نفر از مراجعین به بیمارستان بوعلی از سال 89 تا 90 مورد بررسی قرار گرفتند که به صورت در دسترس انتخاب و وارد مطالعه شدند. یافته ها: ki-67 در 9/81 درصد از بیماران مثبت بود. stageتومور در 4/26 درصد یک، در 2/47 درصد دو و در 4/26 درصد سه بو...
--In this paper a thorough investigation of resistive logic gate, JAWS (Josephson Auto-Weber System) has been made. The current equations of this gate at each stage have been deduced. The dynamic response of this gate has been obtained by the computer-simulation. Our concept of turn-on delay of Josephson junction has been introduced. The effect of overdrive current on turn-on delay for JAWS res...
ISSN: 2347-8578 www.ijcstjournal.org Page 315 A 3-6 Ghz Current Reuse Noise Cancelling Low Noise Amplifier For WLAN And WPAN Application Shivabhakt Mhalasakant Hanamant [1], Dr.S.D.Shirbahadurakar [2] M.E Student , Guide [2] Department of E & TC Dr. D.Y.Patil COE, Ambi Pune – India ABSTRACT A wideband low-noise amplifier (LNA), which is a key block in the design of broadband receivers for multi...
The influence of transistor size reduction (scaling) on the speed of realistic multi-stage integrated circuits (ICs) represents the main performance metric of a given transistor technology. Despite extensive interest in graphene electronics, scaling efforts have so far focused on individual transistors rather than multi-stage ICs. Here we study the scaling of graphene ICs based on transistors f...
In this work, we analyze the effects of an inter-stage capacitor located between the power stage input and the driver stage output on the overall efficiency of a RF CMOS power amplifier and on gate-drain reliability problems. To verify the analyzed effects, we designed a RF CMOS power amplifier with a center frequency of 1.85GHz. Class-D amplifiers with a feedback resistor are used as driver st...
In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...
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