ZnSe-based heterostructures grown on GaAs substrates have been investigated for use in pindiode LED applications. ZnSe has a large band gap, 2.76 eV, as well as a near lattice match to GaAs, 5.6688 Å vs. 5.6538 Å, respectively. In this study a metallorganic vapor phase epitaxy (MOVPE) deposition technique is used to produce doped and undoped thin films of ZnSe on (100) GaAs. Understanding the e...

The solid state thermal, one pot, efficient chemical reaction between Zn and S or Se elements in a closed reactor at 650 degrees C/60 min under their autogenic pressure in an inert atmosphere yielded luminescent ZnS and ZnSe semiconducting nanopowders (NPs). Scanning and Transmission electron microscopy measurements confirmed the size and shape of the as formed ZnS and ZnSe NPs. The wide size d...

Vanadium-doped ZnSe films were epitaxially grown on (100) GaAs substrates by metal-organic vapor phase epitaxy. The crystal structure and the state of vanadium in the ZnSe crystal were investigated using X-ray diffractometry, infrared absorption, and photocurrent. It was revealed that zinc sites in the ZnSe crystal were substituted by vanadium atoms on the basis of the results of infrared absor...

Photoluminescence is used to optically characterize epitaxially-grown ZnSe. The ZnSe has been grown by three different growth techniques; molecular beam epitaxy, metalorganic molecular beam epitaxy and gas source molecular beam epitaxy. Photoluminescence measurements have been made for each growth method for a wide range of growth parameters. The effects of the growth parameters, as well as the...

Wide-band-gap semiconductors typically can be doped either n type or p type, but not both. Compensation by native point defects has often been invoked as the source of this difficulty. We examine the wide-band-gap semiconductor ZnSe with first-principles total-energy calculations, using a mixed-basis program for an accurate description of the material. Formation energies are calculated for all ...

We report a phosphine-free one-pot method to synthesize ZnSe/CdS/ZnS core-shell quantum dots (QDs) with composite type-II/type-I structures and consequent reabsorption suppression properties. The as-synthesized QDs possess high efficient red emission (with quantum yield of 82%) and high optical stability. Compared to type-I QDs, the ZnSe/CdS/ZnS QDs show larger Stokes shift and lower reabsorpti...

Single crystalline ZnSe nanowires were fabricated on GaAs substrates by molecular beam epitaxy technique via Au-catalyzed vapor-liquid-solid reaction. The nucleation and initial growth of the nanowires were investigated by high-resolution transmission electron microscopy. It was revealed that Au catalysts initially reacted with the substrate forming binary AuGa2 alloy droplets. The sizes of the...

The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100) substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was fo...

ZnSe/semi-insulating GaAs interfaces have been studied by observing Photogenerated plasmon – LO (PPL) coupled modes by non-resonant microRaman spectroscopy. The effect of the carriers generated by the focused laser beam was investigated for a series of different thicknesses of ZnSe epitaxial layers. The PPL mode in GaAs is observed in micro-Raman spectra for all samples, but with different magn...

The recently synthesized freestanding four-atom-thick double-layer sheet of ZnSe holds great promise as an ultraflexible and transparent photoelectrode material for solar water splitting. In this work, we report theoretical studies on a novel three-atom-thick single-layer sheet of ZnSe that demonstrates a strong quantum confinement effect by exhibiting a large enhancement of the band gap (2.0 e...