A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 10(4) sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such ...

Gate dielectrics comprised of nanocrystalline HfO2 in gate stacks with thin SiO2/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO2 and other transition metal elemental oxides are assigned to O-atom divacancies, c...

Two new methods for synthesizing nanostructured HfO2 have been developed. The first method entails exposing HfTe2 powders to air. This simple process resulted in the formation of nanometer scale crystallites of HfO2. The second method involved a two-step heating process by which macroscopic, freestanding nanosheets of HfO2 were formed as a byproduct during the synthesis of HfTe2. These highly t...

A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor MOS structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3 nanolaminate gate dielectric improves the GaAs MOS characteristics such as dielectric constant, breakdown voltage, and frequency dispersion. A possible origin for the widely observed larger frequency dis...

The gate leakage current of metal–oxide– semiconductors (MOSs) composed of hafnium oxide (HfO2) exhibits temperature dependence, which is usually attributed to the standard Poole–Frenkel (P–F) transport model. However, the reported magnitudes of the trap barrier height vary significantly. This paper explores the fundamental challenges associated with applying the P–F model to describe transport...

Abstract—The origin of negative flat-band shift using La2O3 incorporation in HfO2 dielectrics has been extensively examined. From careful extraction of effective work function of gate electrode and fixed charges at each interface, it has been revealed that La2O3 at high-k/Si substrate or high-k/SiO2 interface has either large amount of positive fixed charges or an additional dipole of 0.36 V co...

Studies of Metal–insulator–metal (MIM) capacitors having high-κ La2O3\HfO2 dielectric stacks are fabricated using Pulse Laser Deposition (PLD) is carried out. Nano-sized La2O3\HfO2 dielectric stacks are deposited using PLD system under optimized pressure, substrate temperature and numbers of shots inside argon ambient chamber. The morphology of dielectric stacks is examined using AFM and the th...

This paper presents a study of Ni-silicides as the bottom electrode of HfO2-based RRAM. Various silicidation conditions were used to obtain different Ni concentrations within the Ni-silicide bottom electrode, namely Ni2Si, NiSi, and NiSi2. A 10nm HfO2 switching material and 50nm TiN top electrode was then deposited and etched into 500nm by 500nm square RRAM cells. Cell performance of the Ni2Si ...

We report here the epitaxial growth of III-nitride material on freestanding HfO2 gratings by molecular beam epitaxy. Freestanding HfO2 gratings are fabricated by combining film evaporation, electron beam lithography, and fast atom beam etching of an HfO2 film by a front-side silicon process. The 60-μm long HfO2 grating beam can sustain the stress change during the epitaxial growth of a III-nitr...

We investigate the use of perfluorodecyltrichlorosilane-based self-assembled monolayer as seeding layer for chemical vapour deposition of HfO2 on large area CVD graphene. The deposition and evolution of the FDTS-based seed layer is investigated by X-ray photoelectron spectroscopy, Auger electron spectroscopy, and transmission electron microscopy. Crystalline quality of graphene transferred from...