Today’s GaAs PHEMTs make it possible to cover applications of an extremely wide frequency range, as high as 100 GHz, with a single device type. In this paper, a set of models and calibrations for the predictive device simulation of GaAs PHEMTs is developed. The simulation setup includes a description of the device geometry. In particular, a realistic representation of the region between the ohm...

This paper presents an optimized three-cell Nonuniform Distributed Amplifier (NUDA) suitable for optoelectronic drivers in the Q band. is first NUDA of Darlington topology designed with 0.1µm GaAs pHEMT process a transition frequency fT 130GHz. Gate microstrip line sections, drain and active device sizes were to obtain high gain large bandwidth from Monolithic Microwave Integrated Circuit (MMIC...

The design and measured results of a single-substrate transceiver module suitable for 76–77-GHz pulsed-Doppler radar applications are presented. Emphasis on ease of manufacture and cost reduction of commercial millimeter-wave systems is employed throughout as a design parameter. The importance of using predictive modeling techniques in understanding the robustness of the circuit design is stres...

This work presents two different approaches for the implementation of pseudomorphic high electron mobility transistors (pHEMTs) and planar Gunn diodes on the same gallium arsenide substrate. In the first approach, a combined wafer is used where a buffer layer separates the active layers of the two devices. A second approach was also examined using a single wafer where the AlGaAs/InGaAs/GaAs het...

Abstract A high-performance 3–6 GHz monolithic digital control attenuator chip is designed by using a 0.25 μm GaAs pHEMT process. The circuit adopts cascade structure of 6 basic attenuation units, and 64 states are formed controlling the on-state combination different bits, connected in parallel to resistor given. main simulation results show that digitally controlled takes 0.5dB as step, maxim...

This paper proposes a novel 8–18 GHz 90° switched T-type phase shifter (TPS). In contrast to the conventional TPS, proposed TPS adds compensation capacitance greatly enhance shifting capacity. Moreover, designed structure also integrates filtering network, which can effectively achieve flat relative shift in wide band. The is fabricated using 0.15 μm GaAs pHEMT technology. achieves homogeneous ...