We investigated the influence of low-concentration indium (In) doping on the chemical and structural properties of solution-processed zinc oxide (ZnO) films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs). The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces...

For effectively fabricating nanocrystalline ZnO thin films by the sol-gel method, the relationships between the temperature of the heat treatment and the quality of the ZnO thin films was observed. The decomposition of the sol was analyzed by TG-DTA. The orientation of the c-axis of the ZnO thin film was identified by XRD. The morphology was observed and estimated by SEM. The experimental resul...

Zinc oxide films have been formed from thermally evaporated zinc films on polished and textured silicon wafers after heat treatment at temperatures between 400-900°C for 10min in oxygen ambient. These ZnO films show crystalline structure and the values of their refractive index are found to increase slightly from 1.85 for films annealed at 400°C to 2.05 for the films annealed at 900°C. The film...

Structural, electrical and optical properties of indium tin oxide or ITO (In2O3:SnO2) thin films on different substrates are investigated. A 100-nm-thick pre-deposited zinc oxide (ZnO) buffer layer is utilized to simultaneously improve the electrical and optical properties of ITO films. High purity ZnO and ITO layers are deposited with a radio frequency sputtering in argon ambient with plasma p...

The current-voltage characteristics of Ni contacts with the surfaces of ZnO thin films as well as single crystal (0001) ZnO substrate are investigated. The ZnO thin film shows a conversion from Ohmic to rectifying behavior when annealed at 800°C. Similar findings are also found on the Zn-polar surface of (0001) ZnO. The O-polar surface, however, only shows Ohmic behavior before and after anneal...

Highly textured undoped (pure) and Al doped ZnO nanocrystalline thin films prepared by ultrasonic atomization and pyrolysis method are reported in this paper. ZnCl2 water solution was converted into fine mist by ultrasonic atomizer (Gapusol 9001 RBI Meylan, France). The mist was pyrolyzed on the glass substrates in horizontal quartz reactor placed in furnace. The Structural and microstructural ...

Thin film of zinc oxide was prepared by spin coating on pyrex glass using zinc acetate dehydrate, 2methoxyethanol and monoethanolamine (MEA) as a precursor, solvent and stabilizer respectively. Also, Aluminium-doped thin film of ZnO was prepared by using AlCl3. Deposited thin films were investigated for structural and optical properties using X-ray diffraction (XRD) and UV–VIS-NIR spectrophotom...

ZnO thin films have been synthesized by means of a simple hydrothermal method with different solvents. The effect of deionized water content in the mixed solvents on the surface morphology, crystal structure, and optical property has been investigated by scanning electron microscopy, X-ray diffraction, and UV-Vis spectrophotometer. A large number of compact and well-aligned hexagonal ZnO nanoro...

In this research work, the production of undoped and silver (Ag) doped zinc oxide (ZnO) thin films for food packaging applications was developed. The main goal was to determine the influence of coatings morphology and thickness on the antimicrobial performance of the produced samples. The ZnO based thin films were deposited on PET (Polyethylene terephthalate) by means of DC reactive magnetron s...

Zinc oxide (ZnO) is a versatile material of compound semiconductors with excellent proper‐ ties and extensive applications in electronics, optoelectronics, sensors, and catalyses (Das et al, 2007). ZnO thin films have attracted considerable attention because they can be tailored to possess high electrical conductivity, high infrared reflectance and high visible transmit‐ tance by different coat...