We study the dynamics of the switching process in a magnetic tunnel junction composed of 5 layers with the magnetization of the two side layers fixed. The magnetization of the middle free layer can be switched between the two stable configurations by passing the current through the tunnel junction in a certain direction. The dependence of the switching time on the parameters of the penta-layer ...

We investigated the effect of a thin MgO underlying layer (~3 monoatomic layers) on the growth of GaOx tunnel barrier in Fe/GaOx/(MgO)/Fe(001) magnetic tunnel junctions. To obtain a single-crystalline barrier, an in situ annealing was conducted with the temperature being raised up to 500 °C under an O₂ atmosphere. This annealing was performed after the deposition of the GaOx on the Fe(001) bott...

We calculate the efficiency with which magnetic tunnel junctions can be used as resonant detectors of incident microwave radiation via the spin-torque diode effect. The expression we derive is in good agreement with the sensitivities we measure for MgO-based magnetic tunnel junctions with an extended unpatterned magnetic pinned layer. However, the measured sensitivities are reduced below our es...

Boundary-layer wind tunnel provides a unique platform to reproduce urban, suburban and rural atmospheric boundary layer (ABL) by using roughness devices such as vortex generators, floor roughness, barrier walls, and slots in the extended test-section floor in the contraction cone. Each passive device impacts wind properties in a certain way. In this study, influence of various passive devices o...

Viscous effect of wing in ground effect in wind tunnel test was investigated numerically. Ground settings in wind tunnel test were simulated by specifying different ground boundary conditions in CFD. It was revealed for fixed-ground based wind tunnel test that: boundary layer developed from the ground deforms effective ground surface and introduces a decreased effective ground clearance; a shar...

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The Nb-based superconductor-insulator-superconductor (SIS) tunnel junctions have been broadly used in many applications. The critical current density ( ), one of the most important parameters of SIS tunnel junction, is usually controlled by the oxygen exposure ( 2) of the Al oxidation process. R. E. Miller et al. demonstrated the relation between and oxygen exposure using the SNEP process. Howe...