نتایج جستجو برای: thermionic emission

تعداد نتایج: 180582  

Journal: :Journal of the Illuminating Engineering Institute of Japan 1995

2005
Z. Bian A. Shakouri

In this paper, electron emission from non-planar potential barrier structures is analyzed using a Monte Carlo electron transport model. Compared to the planar structures, about twice bigger emission current can be achieved for the non-planar tall barriers. The thermionic emission enhancement is attributed to combined effects of increased effective interface area and reduced probability of total...

2006
A. Shakouri Z. Bian R. Singh Y. Zhang D. Vashaee T. E. Humphrey J. M. Zide G. Zeng J-H. Bahk A. C. Gossard J. E. Bowers

A brief overview of the research activities at the Thermionic Energy Conversion (TEC) Center is given. The goal is to achieve direct thermal to electric energy conversion with >20% efficiency and >1W/cm power density at a hot side temperature of 300-650C. Thermionic emission in both vacuum and solid-state devices is investigated. In the case of solid-state devices, hot electron filtering using ...

2007
Daryoosh Vashaee Ali Shakouri Jack Baskin

Recent studies have predicted that heterostructure superlattices can enhance the effective thermoelectric power factor significantly through selective emission of hot carriers via thermionic emission. Here, we study the potential of SiGe/Si superlattices for power generation at high temperatures. A detailed theory based on Boltzmann transport equation is developed which takes into account multi...

Journal: :Physical chemistry chemical physics : PCCP 2015
James N Bull Christopher W West Jan R R Verlet

Photoelectron velocity-map imaging and electronic structure calculations have been used to study the temporary anion (resonance) dynamics of the closed-shell site-specific deprotonated tetracene anion (C18H11(-)) in the hv = 3.26 eV (380 nm) to 4.13 eV (300 nm) range. In accord with a recent frequency-, angle-, and time-resolved photoelectron imaging study on a related but open-shell polyaromat...

2001
A. Tsukernik D. Cheskis O. Potashnik A. Cho

We have measured the dependence of the Fermi energy on carrier concentration in Sn doped InGaAs at 4.2 K and 300 K. At 4.2 K the Fermi energy was measured by photoluminescence spectroscopy, and at 300 K it was deduced from transport measurements of thermionic emission. In both cases the dependence of the Fermi energy on the mobile electron concentration, measured by Hall effect, strongly deviat...

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