The evolution of HTS device technologies will benefit fsorn the development 01' MOCVD (Metal-organic Chemical Vapor Deposition) routes to high quality HTS I'ilms as well as to those of insulators with low dielectric loss and close HTS lattice matches. Reviewed here are research efforts at precursor design focusing on Ba sources. A novel low pressure TGA technique is used to compare volatilities...

Abstract By modulating the thermal stress during film growth, strained aluminum nitride (AlN) thin films with ferroelectric-like behavior were successfully grown by metal organic chemical vapor phase deposition (MOCVD) on silicon (Si) (111) substrate. The capacitors AlN fabricated and experimentally demonstrated, linear to was observed, explained in terms of residual strains film. This work rep...

We demonstrate an in situ mask removal technique for use in selective area epitaxy (SAE) by metal organic chemical vapor deposition (MOCVD). The mask material is native aluminum oxide (AlxOy) formed by wet thermal oxidation of a thin AlGaAs layer. The AlxOy layer is patterned using standard photolithography and wet chemistry outside of chamber. The AlxOy layer forms a high-quality, pin-holefree...

We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues ...

In this article we report on two dimensional sheet charge and mobility in GaN/AlGaN heterostructure field effect transistors. Both experimental and theoretical results are presented. Experimental results are reported on samples grown by metal organic chemical vapor deposition ~MOCVD! and molecular beam epitaxy ~MBE!. Theoretical studies are done to examine how spontaneous polarization and piezo...

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited...

Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a ...

Chalcopyrite Cu(In,Ga)Se2 (CIGS) solar cells prepared via metal-organic chemical vapor deposition (MOCVD) are one of the candidates for highly advanced photovoltaic devices. This is because their effectiveness and potential reducing production costs through large-scale production. However, research on MOCVD-prepared progressing slower than that other types cells, primarily preparation CuInSe2 (...

Regularly patterned InGaN/GaN quantum-well nanorod (NR) light-emitting diode (LED) arrays are grown with MOCVD and characterized with cathodoluminescence and transmission electron microscopy. The dependencies of their morphologies and emission behaviors on the geometry of growth pattern and MOCVD growth condition are investigated. Also, a light-emitting device consisting of such an NR LED array...