نتایج جستجو برای: thermal bonding

تعداد نتایج: 258729  

Journal: :Microelectronics Reliability 2012
S. L. Lin W. C. Huang C. T. Ko Kuan-Neng Chen

Process optimization of BCB polymer to silicon oxide bonding was investigated. The suitable bonding temperature is about 300 C, while bond failure of BCB-to-oxide bonding is observed starting from 400 C. Bonding interface morphologies and bond strengths of BCB-to-oxide bonding were investigated as well. PECVD oxide to BCB bonding has better bonding quality than that of thermal oxide to BCB bond...

Journal: :Nanotechnology 2015
K W Park E M Krivoy H P Nair S R Bank E T Yu

Scanning thermal microscopy has been implemented in a cross-sectional geometry, and its application for quantitative, nanoscale analysis of thermal conductivity is demonstrated in studies of an ErAs/GaAs nanocomposite superlattice. Spurious measurement effects, attributable to local thermal transport through air, were observed near large step edges, but could be eliminated by thermocompression ...

1999
Michael Mayer Oliver Paul Daniel Bolliger Henry Baltes

A novel ball bond process optimization method based on a thermal signal from an integrated aluminum microsensor is reported. The in-situ temperature during the ball bonding is measured and analyzed. The ultrasonic period shows distinct features corresponding to the scrubbing of the ball on the pad and the intermetallic bond growth, and the ball deformation by ultrasonic softening. A peak of the...

Journal: :Nanoscale 2015
Ruo-Zhou Li Anming Hu Denzel Bridges Tong Zhang Ken D Oakes Rui Peng Uma Tumuluri Zili Wu Zhili Feng

Nanoinks are currently a topic of heightened interest with respect to low temperature bonding processes and printable electronics. We have developed an innovative polyvinylpyrrolidone (PVP)-stabilized Ag nanoplate ink amenable to very strong low temperature packaging, and investigated the relationship between bonding strength and electrical conductivity post-bonding. PVP shell plastic deformati...

1999
Bong-Hwan Kim Taek-Dong Chung Jong-Won Lee Yong-Jae Lee Kukjin Chun

Silicon direct bonding (SDB) is a bonding technique of two silicon wafers together with homogeneous or heterogeneous layers without the use of any intermediate adhesives. The SDB technique simplifies the process and cost by reducing mask level, and its necessity has increased in terms of its fields of applications such as power devices, SOI, sensors and actuators. Factors which can affect direc...

Journal: :Nanoscale 2014
Lin Zhang Teli Chen Heng Ban Ling Liu

Using atomistic simulations, we demonstrate that β-sheet, an essential component of spider silk protein, has a thermal conductivity 1-2 orders of magnitude higher than that of some other protein structures reported in the literature. In contrast to several other nanostructured materials of similar bundled/layered structures (e.g. few-layer graphene and bundled carbon nanotubes), the β-sheet is ...

Journal: :Spectrochimica acta. Part A, Molecular and biomolecular spectroscopy 2013
Mamdouh S Masoud Adel El-Marghany Adel Orabi Alaa E Ali Reham Sayed

Synthesis of 5-arylidine thiobarbituric acids containing different functional groups with variable electronic characters were described and their Co(2+), Ni(2+) and Cu(2+) complexes. The stereochemistry and mode of bonding of 5-(substituted benzylidine)-2-TBA complexes were achieved based on elemental analysis, spectral (UV-VIS, IR, (1)H NMR, MS), magnetic susceptibility and conductivity measur...

2014

‘Wire bonding’ is used throughout the microelectronics industry for interconnecting dice, substrates and output pins. Fine wires, generally of aluminium or gold 18–50μm in diameter, are attached using pressure and ultrasonic energy to form metallurgical bonds. Devices bonded with gold wire generally need additional thermal energy, and the bonding process is referred to as ‘thermosonic’ rather t...

2009
T. Azoui S. Verde J. B. Sauveplane P. Tounsi

In this paper 3D electro-thermal FE Model using COMSOL Multiphysics software of power vertical MOSFET used in the automotive industry is presented. This model is used to analyze the effects of bonding wire lift off defect and to study the influence of metallization thickness and number of bonding wires on the electrical and thermal behavior of the power device. The maximum temperature enables t...

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