The lithium-sputtering yield from lithium and tin-lithium surfaces in the liquid state under low-energy, singly charged particles as a function of target temperature is measured by using the IIAX (Ion-surface Interaction Experiment) facility. Total erosion exceeds that expected from conventional physical sputtering after accounting for lithium evaporation for temperatures between 200 and 400 oC...

Solid argon is a model system for studies of radiative and nonradiative processes associated with electronic excitation by MeV light ion bombardment. The electronic excited states, excitons and excimers, have been extensively studied in this material and careful studies have also been made of the ejection (sputtering) of atoms from the surface. The sputtering requires transfer of energy from el...

Cobalt-doped ZnO samples were prepared by both sol-gel and magnetron sputtering methods, respectively. Co atoms have incorporated into the ZnO lattice and located at the substitutional sites of the Zn atoms in all samples, while the sol-gel prepared Zn1-xCoxO samples show paramagnetism and the sputtering prepared CoyZn1yO samples appear ferromagnetism. The calculated O K-edge X-ray absorption n...

We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from the decay of H(2p) atoms sputtered by heavy ion impact, but not bulk ice luminescence. Radiolyzed ice do...

Molecular dynamics simulations of the sputtering of Si by keV C60 bombardment have been performed as a function of incident kinetic energy at two incident angles, normal incidence and 45 . Nearly all of the C atoms remain embedded in the surface after bombardment because the C atoms from the projectile form strong covalent bonds with the Si atoms in the target. At low incident kinetic energies,...

This article describes the development of an integrated physical model for the rf diode sputtering of metal thin films. The model consists of: ~1! a computational fluid dynamic finite element model for the velocity and pressure distribution of the working gas Ar flow in the chamber, ~2! a steady-state plasma model for the flux and energy of Ar ions striking the target and the substrate, ~3! a m...

The sputtering of low temperature rare-gas and molecular-gas solids by ion bombardment occurs through two different routes. Collision cascades initiated by momentum transferring collisions of ions with atoms of the solid are effective as they are in metals. The apparent surface binding energy is, however, much lower than the sublimation energy and there is a substantial low energy component to ...

Thin layers of indium tin oxide are applied as electrical contacts in flat displays since they are conductive and optically transparent [I]. Targets are coated with IT0 by reactive magnetron sputtering. A partially reduced ITO-sputtering target is eroded by a Arlo plasma. Sputtered In and Sn atoms are oxidized within the plasma and redeposited on the substrate. During the sputtering process sma...

An analytical formula is developed for the evolution of angular dependence of sputtering yields by extending the theory of sputtering yield proposed by Sigmund. We demonstrate that the peak of sputtering yield at oblique incidence can be attributed to a balance between the increased energy deposited on the surface by incident ion which enhances the sputtering yield and the decreased depth trave...