We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer, which induces a voltage shift on the ...

A bidirectional single-electron counting device is demonstrated. Individual electrons flowing in forward and reverse directions through a double quantum dot are detected with a quantum point contact acting as a charge sensor. A comprehensive statistical analysis in the frequency and time domains and of higher order moments of noise reveals antibunching correlation in single-electron transport t...

In this paper, we present the results of single-electron tunneling in two-dimensional (2D) hexagonal closed packed arrays of palladium nanoparticles. After inspecting the emergence of Coulomb blockade phenomena, we demonstrate the possibilities of using these arrays as a single-electron tunneling based hydrogen sensor. We assumed arrays of palladium nanoparticles with diameters of 3.5 and 6...

in this study, we have theoretically investigated the effect of electron stopper layer on internal temperature distribution of high performance vertical cavity surface-emitting laser emitting at 1305 nm.  simulation software pics3d, which self-consistently combines the 3d simulation of carrier transport, self-heating, gain computation and wave-guiding, was used. simulation results show that cha...

A novel single electron pump based on individual molecules (a single wall carbon nanotube) is discussed in terms of the hybrid superconducting-normal conducting pumping principle. A concept demonstration device has been built based on a carbon nanotube contacted by Nb-Ti leads. Charge current quantization is achieved through rf modulation of the back gate voltage. The device is able to transfer...

In this paper we present a simulation approach for electron transport in singleelectron devices based on a weak-coupling formulation for the linear-response transconductance of a quantum dot/reservoir system. A simulation tool devised for the simulation of single-electron transistors has been developed. It provides the equilibrium solution of the nonlinear Poisson equation for the classical cha...

A nanoelectromechanical device based on magnetic exchange forces and electron spin flips induced by a weak external magnetic field is suggested. It is shown that this device can operate as a new type of single-electron "shuttle" in the Coulomb blockade regime of electron transport.

Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM). In this paper, we have design and study a nano-device structure using a two dimensional array MTJs for Volatile and Non-Volatile-SEM, in order to analyze the impact of physical parameters on the performances. We investigate the single-el...