The operation of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is based on the fact that the lateral conductivity of silicon at the silicon dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between metal gate and oxide, and applying a voltage across the insulator on top of the silicon, the lateral conducti...

This study compares the performance of two types capacitive devices, indium tin oxide-aluminum oxide-zirconia aluminum oxide-silicon (IAZAOS) and oxide-hafnium (IAHAOS), as silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory (NVM) total dose ultraviolet radiation (UV TD) sensors. Results show that IAZAOS with zirconia oxide charge-trapping layer outperforms IAHAOS hafnium for a UV T...

Fluorine-treated titanium nitride-silicon oxide-hafnium oxide-silicon oxide-silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced charge generation effect and charge-retention reliability characterization for F-MOHOS devices. I...

Strained silicon germanium carbon (Si1 x yGexCy or SiGeC) on silicon was oxidized using a novel photo-oxidation process. The growth rate of the oxide was investigated and found to depend heavily on the germanium and carbon concentrations. MOS capacitors were fabricated with the resulting oxide and electrical characterization was done. The SiGeC MOS capacitors proved to have high leakage current...

Metal oxide semiconductor field-effect transistors, formed using silicon dioxide and silicon, have undergone four decades of staggering technological advancement. With fundamental limits to this technology close at hand, alternatives to silicon dioxide are being pursued to enable new functionality and device architectures. We achieved ferroelectric functionality in intimate contact with silicon...

Silicon nanocrystals embedded in a silicon oxide matrix were deposited by radio frequency reactive magnetron sputtering. By means of Raman spectroscopy, we have found that a compressive stress is exerted on the silicon nanocrystal cores. The stress varies as a function of silicon concentration in the silicon-rich silicon oxide layers varies, which can be attributed to changes of nanocrystal env...

In this paper a method is proposed to fabricate channels for fluidic applications with a depth in the nanometer range. Channels with smooth and straight sidewalls are constructed with the help of micromachining technology by etching shallow trenches into 〈110〉 silicon using native oxide as a mask material and OPD resist developer as the etchant. Sub-50 nm deep fluidic channels are formed after ...

Integrating the entire system on a chip (SOC) is one of themain challenges formany researchers all over the world. One of the major breakthroughs toward achieving this goal has been the ability to manufacture multiple gate oxides for different requirements on the same chip. The most attractive of the techniques currently in the literature is the implantation of nitrogen in silicon, which can be...

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature proc...

abstract:any effects of wood coating with different compounds as nano-zinc, nano-chitosan, chitosan, silicon oil and flaxseed oil on surface properties as; wood color change, surface roughness and wettability were studied in the current research work. for this purpose, sample boards of beech wood were cut into sizes of 2×10×20cm. the specimens were coated with the noticed coatings and tested fo...