It is very interesting that magic electron affection promotes growth of nanocrystals due to nanoscale characteristics of electronic de Broglie wave which produces resonance to transfer energy to atoms. In our experiment, it was observed that silicon nanocrystals rapidly grow with irradiation of electron beam on amorphous silicon film prepared by pulsed laser deposition (PLD), and silicon nanocr...

In this paper a novel anti-reflection (AR) coating based on silicon nano-bars is designed and its impact on the performance of crystalline silicon (c-Si) thin-film solar cells is extensively studied. Silicon nano-bars with optimized size and period are embedded on top of the active layer, under a 100nm Si3N4 layer. As a result of the proposed layer stack, an inhomogeneous intermediate layer wit...

Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metalinsulator-metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300C, were found to be dependent on how the PECVD film was deposited. A silicon nitride film deposited as a mu...

Using a masked hydrogen plasma treatment to spatially control the crystallization of amorphous silicon to polycrystalline silicon in desired areas, amorphous and polycrystalline silicon thin-film transistors (TFTs) with good performance have been integrated in a single film of silicon without laser processing. Both transistors are top gate and shared all process steps. The polycrystalline silic...

Plasma-assisted oxidation, anodization, and nitridation of silicon have been performed in microwave, rf, and dc plasmas with a variety of reactor configurations and a range of plasma densities. Compared to thermal processes at equivalent substrate temperatures, film growth rates are accelerated by the plasma-enhanced generation of reactive chemical species or by the presence of electric fields ...

Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. T...

Three-dimensional Li ion microbatteries are known for their high surface area which leads to high current and capacity compared to traditional planar batteries. This paper describes economical approaches to prepare half 3D microbatteries based on silicon microchannel plates (MCP). The high aspect ratio silicon MCP is formed by electrochemical etching and a nickel layer is coated onto the silico...

− Several aspects of the science and technology of thin film silicon for photovoltaic applications will be presented. The potential advantages of this technology over crystalline wafer technology will be discussed. A basic understanding of the material properties of thin film silicon layers enables to assess their potential and limitations when used in photovoltaic devices. A brief review of th...

Production of silicon film directly by electrodeposition from molten salt would have utility in the manufacturing of photovoltaic and optoelectronic devices owing to the simplicity of the process and the attendant low capital and operating costs. Here, dense and uniform polycrystalline silicon films (thickness up to 60 μm) are electrodeposited on graphite sheet substrates at 650 °C from molten ...

Multiplexed analysis allows researchers to obtain high-density information with minimal assay time, sample volume and cost. Currently, microcarrier or particle-based approaches for multiplexed analysis involve complicated or expensive encoding and decoding processes. In this paper, a novel optical encoding technique based on nano-silicon dioxide film is presented. Microcarriers composed of ther...