Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock. We report a single-walled carbon nanotube (SWNT) transistor technology with an end...

Silicon Carbide as an inorganic material possesses properties like high thermochemical stability, high hardness and fracture toughness, low thermal expansion coefficient etc. It is therefore, widely used in the making of refractory, semiconductor devices, combustion engines, etc. Being a nonoxide, it has a tendency to get oxidized at elevated temperature under oxidizing atmosphere. Oxidation of...

Silicon carbide nanowires have been synthesized at 1400 degrees C by carbothermic reduction of silica with bamboo carbon under normal atmosphere pressure without metallic catalyst. X-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the silicon carbide nanowires....

Near-isotropic pyrolytic carbon containing a small amount of co-deposited silicon carbide has been used for years as the materials from which prosthetic heart valves are fabricated [ 1 ]. Silicon carbide was introduced into this material to increase the hardness and thereby the wear resistance of the material. Silicon carbide, however, has poor thromboresistance relative to pyrolytic carbon, so...

1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By measuring the resonance frequency of the cantilever as a function of silicon-carbide film thickness and developing an appropriate model, the value of the film’s elastic modulus is determined. This value is in good agreement with those reported for s...

Aluminium base alloy (Al-Cu-Si) was reinforced with silicon carbide (SiC) particles, in various percentage compositions from 0-20 wt%. Silicon carbide particle size of 20µm was selected. The molten slurry of SiC reinforced base aluminium metal was casted through green and dry sand casting methods and solidification process was carried out under ambient conditions. A selected population...

Fine, monophasic silicon carbide powder has been synthesized by direct solid-state reaction of its constituents namely silicon and carbon in a 2.45 GHz microwave field. Optimum parameters for the silicon carbide phase formation have been determined by varying reaction time and reaction temperature. The powders have been characterized for their particle size, surface area, phase composition (X-r...

Owing to the remarkable chemical and physical properties, graphene has been widely investigated by researchers over last 15 years. This review summarizes major synthetic methods such as mechanical exfoliation, liquid phase unzipping of carbon nanotube, oxidation-reduction, arc discharge, vapor deposition, epitaxial growth in silicon carbide. Recent advances application graphene-based lithium io...

Silicon is receiving discernable attention as an active material for next generation lithium-ion battery anodes because of its unparalleled gravimetric capacity. However, the large volume change of silicon over charge-discharge cycles weakens its competitiveness in the volumetric energy density and cycle life. Here we report direct graphene growth over silicon nanoparticles without silicon carb...

The mobility of carriers in the channel of silicon carbide is significantly lower than in equivalent silicon devices. This results in a significant increase in on-state resistance in comparison to theoretical predictions and is hindering the uptake of silicon carbide technology in commercial circuits. The density of interface traps at the interface be‐ tween silicon carbide and the dielectric f...