The electronic structures of the MAX-phases Ti3AlC2, Ti3SiC2 and Ti3GeC2 were investigated by soft X-ray emission spectroscopy. These nanolaminated carbide compounds represent a class of layered materials with a combination of properties from both metals and ceramics. The bulksensitive soft X-ray emission technique is shown to be particularly useful for detecting detailed electronic structure i...

UV-irradiation (172 nm) induced changes of PDMS surfaces were investigated with X-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE). Both methods indicate the modification of the PDMS to a silicalike surface (SiO2). These conclusions could be drawn from the elemental composition determined by XPS and the binding energy shifts in the XPS spectra of the Si 2p and O 1s level...

Synchrotron radiation photoemission spectroscopy has been used to study thermal SiOz/Si(lOO) interfaces. Oxides were grown at 700 “C and were then post-annealed at higher temperatures. Various Si oxidation states Si+’ ( x re p resents the oxidation state) at the interface were detected from Si 2p core level measurements. The results show that the amount of both Si’3 and Si+2 increases while tha...

An analysis of n = 3 → 2 transition lines of carbon-like silicon reveals that some ratios of line intensities are sensitive to the electron density. The ratio between two group of 3d → 2p transition lines at 55.246 Å and 55.346 Å is a good ne-diagnostic technique, due to its insensitivity to the electron temperature. Using this property, a lower limit of the density of 0.6×10cm is derived for P...

The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111) surface at approximately 750°C. Scanning tunneling spectra show that the film exhibits a semicon...

The electronic structure of the Si(1 1 1):GaSe van der Waals-like surface termination has been determined by angle-resolved photoelectron spectroscopy using photons in the energy range hν= 12–170 eV supplied by the BESSY and ALS synchrotron light sources. The Si(1 1 1):GaSe surface is isoelectronic to the passivated Si(1 1 1):H and Si(1 1 1):As surfaces, and also reflects the principal building...

High-resolution soft X-ray photoelectron spectroscopy was used to investigate the oxidation of alkylated silicon(111) surfaces under ambient conditions. Silicon(111) surfaces were functionalized through a two-step route involving radical chlorination of the H-terminated surface followed by alkylation with alkylmagnesium halide reagents. After 24 h in air, surface species representing Si(+), Si(...

Soft x-ray emission spectroscopy XES and x-ray absorption spectroscopy XAS are employed to investigate the occupied and unoccupied electronic structures in rocksalt-phase single-crystal CdO. Resonant XES at the OK edge reveals a clear Cd 4d–O 2p hybridized peak and momentum-dependent coherent contributions to the resonant emission spectra. Good agreement is obtained between the above-threshold ...

Aluminum was deposited on epitaxial monolayer-grown graphene on SiC (0001). The effects of annealing up to 1200 °C on the surface and interface morphology, chemical composition, and electron band structure were analyzed in situ by synchrotron-based techniques at the MAX Laboratory. After heating at around 400 °C, Al islands or droplets are observed on the surface and the collected Si 2p, Al 2p,...