We demonstrate a novel display structure for color electronic paper for the first time. Fully transparent amorphous oxide TFT array is directly deposited onto color filter array and combined with E Ink Imaging Film. Taking advantage of the transparent property of the oxide TFT, the color filter and TFT array are positioned at the viewing side of the display. This novel “Front Drive” display str...

Transient reflectivity measurements using ultrashort pulse pump-probe techniques can provide very useful information on fast carrier dynamics in semiconductors. Several non-trivial problems encountered in measuring reflectivity changes have been described. These changes can be very small (ΔR/R ~10 or less) and hence measuring these small changes is not straightforward. The possible solutions in...

rapid thermal processing (rtp) has become a key technology for semiconductor device manufacturing in a variety of applications, such as thermal oxidation, annealing, and thin-film growth. hence, understanding the radiative properties of silicon and other relevant materials is essential for the analysis of the thermal transport processes. we have analyzed and calculated the spectral, directional...

A thin-film transistor: An n-type polymer semiconductor, poly(2,3-bis(perfluorohexyl)thieno[3,4-b]pyrazine), was synthesized through a Pd-catalyzed polycondensation employing a perfluorinated multiphase solvent system. This is the first example of an n-type polymer semiconductor with exclusive solubility in fluorinated solvents. The fabrication of organic field effect transistors containing thi...

generally arranged at a distance of 0.1 nm to 0.5 nm from one another. When such a substance is irradiated with X-rays having a wavelength roughly equivalent to the interatomic or intermolecular distance, the Xray diffraction phenomenon will take place. X-ray diffraction is widely used in the semiconductor field because it is nondestructive and yields crystal structure information relatively ea...

The metal-semiconductor interface in thin-film transistors (TFTs) is one of the bottlenecks on the development of these devices. Although this interface does not play an active role in the transistor operation, a low-quality interface can be responsible for a low performance operation. In a-Si TFTs, a doped film can be used to improve this interface, however, in other TFT technologies, there is...

The presence of a deformation or hump in the subthreshold region of the transfer characteristic of Amorphous Oxide Semiconductor (AOS) Thin-Film Transistors (TFTs) has been observed after DC stress and related to different causes. In previous works, it has been shown that in devices with active-layer thickness greater than 120 nm, a region with relatively high conductivity remains near the back...

Epitaxial m-plane ZnO thin films have been deposited on m-plane sapphire substrates at a low temperature of 200°C by atomic layer deposition. A 90° in-plane rotation is observed between the m-plane ZnO thin films and the sapphire substrates. Moreover, the residual strain along the ZnO [-12-10] direction is released. To fabricate metal-insulator-semiconductor devices, a 50-nm Al2O3 thin film is ...

Microelectronic circuits/arrays produced via high-speed printing instead of traditional photolithographic processes offer an appealing approach to creating the long-sought after, low-cost, large-area flexible electronics. Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally cap...

A variety of methods are available for creating the titanium dioxide (TiO2) semiconductor surface layer of dye-sensitized solar cells (DSSCs); however, many of them are used independently to create surface morphologies that are influenced by only one process. A series of experimental techniques are utilized, some not originally used for thin film preparation, to create a semiconductor surface t...