نتایج جستجو برای: semiconductor metal boundary

تعداد نتایج: 405674  

2015
Woobin Lee Seungbeom Choi Kyung Tae Kim Jingu Kang Sung Kyu Park Yong-Hoon Kim

We report a derivative spectroscopic method for determining insulator-to-semiconductor transition during sol-gel metal-oxide semiconductor formation. When an as-spun sol-gel precursor film is photochemically activated and changes to semiconducting state, the light absorption characteristics of the metal-oxide film is considerable changed particularly in the ultraviolet region. As a result, a pe...

Journal: :Nanoscale 2013
Gilberto Casillas Arturo Ponce J Jesús Velázquez-Salazar Miguel José-Yacamán

Behavior of matter at the nanoscale differs from that of the bulk due to confinement and surface effects. Here, we report a direct observation of liquid-like behavior of a single grain boundary formed by cold-welding Au nanoparticles, 40 nm in size, by mechanical manipulation in situ TEM. The grain boundary rotates almost freely due to the free surfaces and can rotate about 90 degrees. The grai...

Journal: :Acta crystallographica Section B, Structural science, crystal engineering and materials 2015
Michel Vergnat

Plasmonics is a field of study that explores the interaction of light waves and metallic surfaces, and the resulting electron density waves that can be generated from this interaction. The resulting electron density wave that propagates along the surface of the metal is referred to as a surface plasmon polariton, or a surface plasmon. Surface plasmons present many applications. They can be used...

2014
Edward Namkyu Cho Yong Hyeon Shin Ilgu Yun

Articles you may be interested in Possible unified model for the Hooge parameter in inversion-layer-channel metal-oxide-semiconductor field-effect transistors J. Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling Modeling ...

Journal: :J. Comput. Physics 2007
Deborah A. Fixel William N. G. Hitchon

A model for the simulation of the electron energy distribution in nanoscale metal–oxide–semiconductor field-effect transistor (MOSFET) devices, using a kinetic simulation technique, is implemented. The convective scheme (CS), a method of characteristics, is an accurate method of solving the Boltzmann transport equation, a nonlinear integrodifferential equation, for the distribution of electrons...

Journal: :Nanoscale 2018
Aravind Krishnamoorthy Lindsay Bassman Rajiv K Kalia Aiichiro Nakano Fuyuki Shimojo Priya Vashishta

Optical modulation of the crystal structure and materials properties is an increasingly important technique for functionalization of two-dimensional and layered semiconductors, where traditional methods like chemical doping are ineffective. Controllable transformation between the semiconducting (H) and semimetallic (T') polytypes of transition metal chalcogenide monolayers is of central importa...

2010
Chu-Hsuan Lin Chee Wee Liu

The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regi...

Journal: :Nature materials 2015
P Krogstrup N L B Ziino W Chang S M Albrecht M H Madsen E Johnson J Nygård C M Marcus T S Jespersen

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epi...

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