The atomic and electronic structures of semiconductor heterostructures including steps, misfit dislocations and interface disorder are studied by using the densityfunctional tight-binding (TB) method. Atomic structures of misfit dislocations both edge type 1/2 <110> (001) and 60°dislocations in the semiconductor heterostructures, like Si-Ge superlattices and GaAs/Si systems are studied by using...

We have measured the very low temperature (down to 30mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer I stands for the Schottky barrier). As the temperature is lowered below the gap, the resistance increases as expected in SIN junction. Around 300mK, the resistance shows a maximum and decreases at lower...

A one-dimensional mathematical model of the liquid-junction photovoltaic cell was coupled with primary resistance calculations to predict the optimal performance of three cell configurations. Two cells are considered in which the semiconductor is i l luminated from the electrolyte side and one in which the semiconductor is i l luminated from the current-collector side. An economic analysis is p...