This paper evaluates impact of self-heating in wire interconnection on signal propagation delay in an upcoming 32 nm process technology, using practical physical parameters. This paper examines a 64-bit data transmission model as one of the most heating cases. Experimental results show that the maximum wire temperature increase due to the selfheating appears in the case where the ratio of inter...

B4C–Al2O3 composite powder was produced by aluminothermic reduction in Al/B2O3/C system. In this research, microwave heating technique was used to synthesize desired composite. The ball milling of powder mixtures was performed in order to study the effect of mechanical activation on the synthesis process. The synthesis mechanism in this system was investigated by examining the correspondi...

   Self-heating leads to a temperature rise of the laser diode and limits the output power and efficiency due to increased loss and decreased differential gain. To control device self-heating, it is required to design the laser structure with a low optical loss, while the heat flux must spread out of the device efficiently. In this study, a new asymmetric waveguide design is proposed and th...

Canonical fluid dynamic analysis is applied to account for the contributing physical mechanisms and the order of magnitude of the transient moving droplet gasification rate based on energy and species conservation equation as eigenvalues in the general aerothermochemical environment. The results show surprisingly well coordinated self-organized thermofluidchemical mechanisms of dynamic evolutio...

In this paper, we have proposed a novel FinFET with extended body under the poly gate, which is called EB-FinFET, and its characteristic is demonstrated by using three-dimensional (3-D) numerical simulation. We have analyzed and compared it with conventional FinFET. The extended body height dependence on the drain induced barrier lowering (DIBL) and subthreshold swing (S.S) have been also inves...

The relationship of the biasing condition and the self-heating effect of a multi-channel metallic oxide semiconductor field effect transistor (MOSFET) device was examined using various channel currents ranging from triode to saturation regimes. When temperature non-uniformity is generated due to transistor self-heating, the local thermal resistance is conventionally defined through the differen...

As MOS Transistors channel length continues to scale beyond 90nm, classical drift-diffusion model for carrier transport of such type of devices is not valid. For these dimensions of Transistors QuasiBallistic/ Ballistic transport phenomena occur and a new mobility model is required to predict electrical behavior of these devices perfectly. Selfheating is also one the importance critical problem...

We report results of the analytical and numerical investigation of self-heating effects in GaN-based high-power field-effect transistors. The problem of heat transfer in a transistor structure has been solved both analytically, using the method of images, and numerically. Two-dimensional electrothermal simulations of the GaN metal-semiconductor field-effect transistors on SiC and sapphire subst...

Non-collisional heating is an important phenomenon in low-pressure inductively coupled plasmas. In this paper, a self-consistent analytical model for non-collisional heating is developed which shows that non-collisional heating is a warm-electron effect that relies on a resonant interaction of electrons with the electromagnetic wave. Electrons with velocities comparable to the effective wave ph...