Based on mature and high-yield high-voltage (HV) HBT technology monolithically integrated ultra-fast Schottky diodes are developed. The Schottky diodes take full advantage of the optimized HV-HBT layer structure allowing for diode ́s breakdown voltage of 80 V. Due to optimized thermal mounting using priopriatery flip-chip soldering high current switching capability up to 4 A at 60 V was demonstr...

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...

Rectifying diodes of single nanobelt/nanowire-based devices have been fabricated by aligning single ZnO nanobelts/nanowires across paired Au electrodes using dielectrophoresis. A current of 0.5 microA at 1.5 V forward bias has been received, and the diode can bear an applied voltage of up to 10 V. The ideality factor of the diode is approximately 3, and the on-to-off current ratio is as high as...

Whisker contacted GaAs Schottky barrier diodes are the standard devices for mixing and multiplier applications in the THz frequency range. With the decreasing size of Schottky diodes for operation at higher frequencies, the reliability and the physical understanding of the Schottky barrier becomes increasingly important. In this contribution, we present new results concerning the reliability of...

Microwave detectors based on the spin-torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts. However, so far, practical implementations of spin-diode microwave detectors have been limited by the necessity to ...

The current-voltage characteristics for Au/n-Si Schottky diode are generated by simulation. The simulation performed using Newton-Raphson iteration method yields current-voltage characteristics over wide temperature range. The data is analyzed using TDE-mechanism to study the temperature dependence of barrier height and ideality factor. Results obtained from simulation studies show the barrier ...

Rev. Introduction Since the introduction of commercial silicon carbide (SiC) Schottky diodes over 10 years ago, significant improvements in power factor correction (PFC) circuits and motor drives have been realized due to the elimination of minority carrier reverse recovery charge and its resulting switching loss associated with traditional PiN diodes. The early adoption of SiC Schottky diodes ...

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Zero bias Schottky diode model for low RF input power (≤ 0 dBm at antenna input port) and moderate DC current (≥ 30 μA) RECtifying anTENNAs (RECTENNAs) is investigated. The model provides diode parameters at the desired output DC current level to be matched with the antenna so that optimum power transfer from antenna to the diode occurs. The model relies primarily on DC V-I diode characteristic...

Surface potential measurement on atomically thin MoS2 flakes revealed the thickness dependence in Schottky barriers formed between high work function metal electrodes and MoS2 thin flakes. Schottky diode devices using mono- and multi-layer MoS2 channels were demonstrated by employing Ti and Pt contacts to form ohmic and Schottky junctions respectively. Characterization results indicated n-type ...