نتایج جستجو برای: scale integrated circuits

تعداد نتایج: 875607  

Journal: :Journal of nanoscience and nanotechnology 2010
G Roelkens D Vermeulen F Van Laere S Selvaraja S Scheerlinck D Taillaert W Bogaerts P Dumon D Van Thourhout R Baets

In this paper, the use of diffractive grating structures to efficiently interface between a single mode fiber and a high index contrast waveguide circuit is outlined. We show that high index contrast grating structures allow for broadband and high efficiency coupling. Since no polished facet is required on the photonic integrated circuit to interface with the optical fiber, fiber-to-chip gratin...

Journal: :journal of advances in computer research 0
malakeh karimghasemi-rabori department of electrical engineering, payame noor university (pnu), kerman, iran peiman keshavarzian department of computer engineering, kerman branch, islamic azad university, kerman, iran

due to the high density and the low consumption power in the digital integrated circuits, mostly technology of cmos is used. during the past times, the metal oxide silicon field effect transistors (mosfet) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. b...

2014
Jie Sun Ami Yaacobi Erman Timurdogan Zhan Su David B. Cole Ehsan shah Hosseini Michele Moresco Gerald Leake Douglas Coolbaugh Michael R. Watts

We present several optical phased arrays enabled by state-of-the-art large-scale silicon photonic integration which could find potential applications in optical switching, optical communications, light detection and ranging, and holography. OCIS codes: (130.3120) Integrated Optical Devices; (250.5300) Photonic Integrated Circuits.

Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...

2000
Masaru Kokubo Yasuhiro Nunogawa Masumi Kasahara Yasushi Shigeno

INTRODUCTION RAPID advancement of semiconductor integratedcircuit technology has reduced the cost of mobile telecommunication terminals year by year. The global systems for mobile communications (GSM),1) which was standardized mainly by European countries, has enhanced the large scale integration of radio-frequency circuits because mobile telecommunication systems of European countries do not r...

2013
J. Jang M. J. Park. D. Lee J. Kim K. Donepudi S. Bodapati M. M. Izad D. Kimball J. Buckwalter

Journal: :IEEE Journal of Selected Topics in Quantum Electronics 2018

Due to the high density and the low consumption power in the digital integrated circuits, mostly technology of CMOS is used. During the past times, the Metal oxide silicon field effect transistors (MOSFET) had been used for the design and implementation of the digital integrated circuits because they are compact and also they have the less consumption power and delay to the other transistors. B...

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