We investigate tunneling induced nonlinear absorption phenomena in a coupled quantum-dot system. Resonant tunneling causes constructive interference in the nonlinear absorption that leads to an increase of more than an order of magnitude over the maximum absorption in a coupled quantum dot system without tunneling. Resonant tunneling also leads to a narrowing of the linewidth of the absorption ...

Quantum tunneling through an almost classical potential barrier can be strongly enhanced by a nonstationary field so that the penetration through the barrier becomes not exponentially small. This constitutes an extremely unusual phenomenon of quantum physics called Euclidean resonance. A certain nonstationary barrier is proposed with a very low WKB tunneling rate. The quantum dynamics of this b...

We present a theory of tunneling and resonant transitions in one-dimensional molecular systems which is based on Green s function theory of electron sub-barrier scattering off the structural units (or functional groups) of a molecular chain. We show that the many-electron effects are of paramount importance in electron transport and they are effectively treated using a formalism of subbarrier s...

Motivated by recent experiments we analyse a new setup of capacitively coupled semiconductor quantum dots. We identify a region where Kondo-assisted tunneling should be observable. We nd an eeective mapping to a single quantum dot with controllable multi-level structure. We study electron transport through strongly coupled quantum dots in the presence of strong Coulomb repulsion and coupling to...

We theoretically study the electron transport through a resonant tunneling diode (RTD) based on strained AlxGa1−xN/In0.1Ga0.9N/AlxGa1−xN quantumwells embedded in relaxed n-Al0.15Ga0.85N/strained In0.1Ga0.9N emitter and collector. The aluminum composition in both injector and collector contacts is taken relatively weak; this does not preclude achieving a wide band offset at the border of the pre...

Many semiconductor quantum devices utilize a novel tunneling transport mechanism that allows picosecond device switching speeds. The negative differential resistance characteristic of these devices, achieved due to resonant tunneling, is also ideally suited for the design of highly compact, self-latching logic circuits. As a result, quantum device technology is a promising emerging alternative ...