We investigate the reflection near the reststrahlen band of the optical phonon in bulk GaAs in the time domain, using time-resolved terahertz spectroscopy. We find that the dynamics of the reflection measured for GaAs differs strongly from the reflection dynamics that would be expected for a TO phonon with a frequency-independent dephasing time.

Using a conventional reflection high-energy electron diffraction gun together with an electron energy loss spectrometer, we have combined in situ measurements of inelastic scattering intensities from Si L2 s and Ge L2,3 core losses with reflection electron diffraction data in order to analyze the initial stages of Ge heteroepitaxy on Si(OO1). Diffraction data indicate an initial layer-by-layer ...

Binary compounds of SnT family (T = As, Sb, Te, S, Se, P) exhibit novel properties like superconductivity and topologically protected states. Some these crystallize in NaCl type structure or layered structure, both which are considered potentially important for high temperature/unconventional superconductivity. It was previously shown that K-doped BaBiO3 with exhibits superconducting state belo...

One of the challenges in pursuit solid state BEC superconductors is need for unambiguous experimental signatures. Here, authors propose a new signature, relying on Andreev reflection, which distinguishes from BCS superconductors. They demonstrate that, standard tunneling spectroscopy setup, superconductor exhibits suppressed reflection; however, if barrier becomes potential well, then appreciab...