In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by us...

The hybrid action of quantum-dot saturable absorber and Kerr-lens mode locking in a diode-pumped Yb:KGW laser was demonstrated. Using a quantum-dot saturable absorber with a 0.7% (0.5%) modulation depth, the mode-locked laser delivered 90 fs (93 fs) pulses with 3.2 W (2.9 W) of average power at the repetition rate of 77 MHz, corresponding to 462 kW (406 kW) of peak power and 41 nJ (38 nJ) of pu...

a noninteracting quantum-dot arrays side coupled to a quantum wire is studied. transport through the quantum wire is investigated by using a noninteracting anderson tunneling hamiltonian. the conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. moreover, we have fo...

Quantum dots are highly fluorescent and photostable, making them excellent tools for imaging. When using these quantum dots in cells and animals, however, intracellular biothiols (such as glutathione and cysteine) can degrade the quantum dot monolayer, compromising function. Here, we describe a label-free method to quantify the intracellular stability of monolayers on quantum dot surfaces that ...

In this paper, we present the design and characterization of a monolithically integrated tunable laser for optical coherence tomography in medicine. This laser is the first monolithic photonic integrated circuit containing quantumdot amplifiers, phase modulators, and passive components. We demonstrate electro-optical tuning capabilities over 60 nm between 1685 and 1745 nm, which is the largest ...

UNLABELLED We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The...

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other f...

We present analytic treatment of the three different dynamic regimes found in quantum-dot laser turn-on and modulation dynamics. A dynamic coupling, and thus density-dependent scattering lifetimes between dots and reservoir, are identified to be crucial for a realistic modeling. We derive a minimal model for the quantum-dot laser dynamics that can be seeded with experimentally accessible parame...