We study the effects of electron-electron correlations and confinement potential on the far-infrared spectrum of a lateral two-electron quantum-dot molecule by exact diagonalization. The calculated spectra directly reflect the lowered symmetry of the external confinement potential. Surprisingly, we find interactions to drive the spectrum towards that of a high-symmetry parabolic quantum-dot. We...

Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from...

We study some basic quantum confinement effects through investigation a deformed harmonic oscillator algebra. We show that spatial confinement effects on a quantum harmonic oscillator can be represented by a deformation function within the framework of nonlinear coherent states theory. Using the deformed algebra, we construct a quantum field theory in confined space. In particular, we find that...

  Germanium nanostructures were generated in the post annealed germanium oxide thin films. Visible and near infrared photoluminescence bands were observed in the samples annealed at 350°C and 400°C, respectively. These different luminescence ranges are attributed to the presence of the defects in oxide matrix and quantum confinement effect in the germanium nanostructures, respectively. Decay ti...

As MOSFETs are scaled into the deep sub-micron (decanano) regime, quantum mechanical confinement and tunnelling start to dramatically affect their characteristics. It has already been demonstrated that the density gradient approach can be successfully calibrated in respect of vertical quantum confinement at the Si/SiO2 interface and can reproduce accurately the quantum mechanical threshold volt...

– Quantum mechanical analysis of the quantum confinement of ultrashort CMOS is numerically very expensive. In this paper we present a macroscopic model, which includes a new approach to match the vertical carrier profile and combines it with a classical model in lateral direction. The simulation results show a significant improvement concerning the accuracy of the carrier profile and the C/V ch...

The goal of this NU-Argonne collaborative project is to explore quantum confinement in atomiclayer semiconductors. Quantum confinement in three-dimensional semiconductor crystals has improved energy conversion efficiency in nanocrystal quantum dot solar cells [1]; translating this approach to two dimensional (2D) materials can offer similar absorption enhancement with higher energy absorption d...

Polaron and bipolaron formation in the Holstein-Hubbard model with harmonic confinement potential, relevant to quantum dot structures, is investigated in one to three dimensions by means of unbiased quantum Monte Carlo simulations. The discrete nature of the lattice and quantum phonon effects are fully taken into account. The dependence on phonon frequency, Coulomb repulsion, confinement streng...

We explore and demonstrate quantum confinement without walls in metal-clad InAs quantum wells. We observed intersubband absorption from confined states in InAs clad with Al, Sb, Nb, W, Pt, Ag, Au, Ti or In. We found that using this novel method, we can explore the physics and chemistry at the metal–semiconductor interface; reflection, autoionization, well-width fluctuation and interface reactio...

In this paper, the electronic eigenstates and energy spectra of single and two-interacting electrons confined in a concentric double quantum rings with a perpendicular magnetic field in the presence of         on-center donor and acceptor impurities are calculated using the exact diagonalization method. For a single electron case, the binding energy of on-center donor and acceptor impurities ar...