We discuss in detail a new mechanism of nonlinearity of the light–current characteristic (LCC) in heterostructure lasers with reduced-dimensionality active regions, such as quantum wells (QWs), quantum wires (QWRs), and quantum dots (QDs). It arises from: 1) noninstantaneous carrier capture into the quantum-confined active region and 2) nonlinear (in the carrier density) recombination rate outs...

We report on the lasing characteristics of threeand five-stack InAs/GaAs quantum dot QD lasers grown by metal organic chemical vapor deposition. By increasing the number of stacked dot layers to 5, lasing was achieved from the ground state at 1135 nm for device lengths as short as 1.5 mm no reflectivity coatings . The unamplified spontaneous emission and Z ratio as a function of injection curre...

Introduction: The lasing wavelength of a semiconductor laser inevitably changes with varying the operation temperature, which is, however, not desirable for applications requiring specific and stable light wavelength. Thus, laser diodes with wavelength insensitive to temperature are fascinating and can drastically ease the critical requirements on precise temperature control. The quantum dot (Q...

We present a theoretical analysis of the gain characteristics of InGaN/AlGaN quantum dot (QD) lasers. We calculate the elastic strain distribution caused by the lattice mismatch between the QD and the barrier using an original method which takes into account the hexagonal symmetry of the structure’s elastic properties. The method is based on an analytical derivation of the Fourier transform of ...

Quantum dot (QD) lasers exhibit many interesting and useful properties such as low threshold current, temperature insensitivity or chirpless behavior. In order to reach the standards of long-haul optical transmissions, 1.55 μm InAs QD lasers on InP substrate have been developed. Based on time resolved photoluminescence (PL) measurements, carrier dynamics behavior is at first investigated. Elect...

Data are presented showing that, besides the improvement in carrier collection, it is advantageous to locate strain-matching auxiliary InGaAs layers @quantum wells ~QWs!# within tunneling distance of a single-quantum-dot ~QD! layer of an AlGaAs–GaAs–InGaAs–InAs QD heterostructure laser to realize also smaller size QDs of greater density and uniformity. The QD density is changed from 2310/cm for...

We study experimentally the dynamics of quantum-dot (QD) passively mode-locked semiconductor lasers under external optical injection. The lasers demonstrated multiple dynamical states, with bifurcation boundaries that depended upon the sign of detuning variation. The area of the hysteresis loops grew monotonically at small powers of optical injection and saturated at moderate powers. At high in...

The growth and optical properties of InAs/GaAs quantum dot (QD) bilayers are investigated, where the strain interactions between closely spaced QD layers are exploited to tailor the optical properties of the system. The underlying (seed) layer acts as a template for subsequent growth of the upper layer, whose properties can then be modified due to the greater freedom in the choice of growth con...

Abstract InAs/GaAs quantum-dot (QD) lasers offer a promising method to realise Si-based on-chip light sources. However, the monolithic integration of III–V materials on Si introduces high density threading dislocations (TDs), which limits performance such laser device in terms lifetime. Here, we proposed kinetic model including degradation term and saturation simulate process caused by TDs earl...