Semiconductor power modules are the key hardware components of a traction inverter. It drives motor speed and torque, managing energy exchange from battery to viceversa. The increasing demand for electric hybrid vehicle requests high performance modules. Power semiconductor devices based on wide band gap compound, like silicon carbide (SiC), have excellent electrical properties in terms on-stat...

Several antimonide-based compound semiconductor (ABCS) microstrip MMICs, an X-Band low-noise amplifier and an rf switch, using 0.1-μm gate length Antimonide Based Compound Semiconductor (ABCS) metamorphic InAs/AlSb HEMTs, have been fabricated and characterized on a 50 μm GaAs substrate. The compact 0.7 mm two-stage X-band LNA demonstrated a 1.25 dB noise-figure at 10 GHz with an associated gain...

Demand of power efficient circuits has grown significantly due to fast growth of battery operated portable applications. Though, subthreshold operation of device shows huge potential towards satisfying the ULP requirement, it holds many challenging design issues. As integration density of interconnect increases at every technology node, increased delay and crosstalk become more challenging desi...

Inverters designed using reduced active semiconductor devices can be of interest to the industry because of their lower cost and enhanced reliability linked to their less complex gating and control circuitries. In this paper a four switch three phase b-4 topology for the grid connected application in an effort to reduce the cost of the inverter is investigated. Admittedly, this topology warrant...

In the field of power electronics applications, advances in high voltage semiconductor devices have led specifically over the past few decades to tremendous improvements in terms of power handling capability and control. We focus in this paper on the recent developments with regard to optimizing the power semiconductor for the solid state HVDC breaker for HVDC grid applications. One of the trad...

In the field of power electronics applications, advances in high voltage semiconductor devices have led specifically over the past few decades to tremendous improvements in terms of power handling capability and control. We focus in this paper on the recent developments with regard to optimizing the power semiconductor for the solid state HVDC breaker for HVDC grid applications. One of the trad...

a new output structure for class e power amplifier (pa) is proposed in this paper. a series lc resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. this resonator causes low impedance at the second harmonic. the output circuit is designed to shape the switch voltage of the class e amplifier and lower the voltage stress of the transistor. t...

A new family of matrix converters is introduced, that employs relatively simple voltage-clamped buses and can generate multilevel voltage waveforms of arbitrary magnitude and frequency. The basic configuration includes a nine-switch matrix that uses four-quadrant switch cells. Each four-quadrant switch cell resembles a full-bridge inverter and can assume three voltage levels during conduction. ...

optoelectronic GaAs static induction transistor,’’ IEEE Electron Device Lett., vol. 14, no. 4, 1993, pp. 190–192. 18. F.C. Lee, D. Boroyevich, S.K. Mazumder, K. Xing, H. Dai, I. Milosavljevic, Z. Ye, T. Lipo, J. Vinod, G. Sinha, G. Oriti, J.B. Baliga, A. Ramamurthy, A.W. Kelley, and K. Armstrong, Power Electronics Building Blocks and System Integration, Blacksburg, Virginia: Virgin Power Electr...