The paper describes the performance analysis, structural design and fabrication of piezoresistive pressure sensor using simulation technique. A polysilicon double nano-wire piezoresistor was fabricated by means of RIE (reactive ion etching). The polysilicon double nanowire pressure sensor has 100x100nm cross section area and has a thickness about 10nm. Finite element method (FEM) is adopted to ...

the effect of evaporation rate on structural, morphological and optical properties of electron beam evaporated cds thin films have been investigated. cds thin film deposited by electron beam evaporation method in 12nm/min and 60nm/min evaporation rates on glass substrates. x-ray diffraction, scanning electron microscopy, uv-vis-nir spectroscopy and atomic force microscopy were used to character...

dye sensitized solar cell was fabricated from a double layer photoanode. first, tio2 nanoparticles  were synthesized by hydrothermal method. these tio2 nps were deposited on fto glasses by electrophoretic deposition  method in applied voltage of 5 v and epd time of 2.5-10 min. then tio2 hollow spheres (hss) were synthesized by sacrificed template method with carbon spheres as template and ttip ...

In this article, the effect of plasmonic properties of metal nanoparticles with different shapes, and moreover, their plasmonic-photonic interaction, on solar cell performance were investigated and simulated. Because of low conversion efficiency and then high cost of solar cells, it is difficult to commercialize and replace them with conventional energy resources. But in recent years, the plasm...

In this paper presents two microsensors structures compatible with microelectronic technologies that are analyzed for application in radiometers. The first structure is formed by one resistor that is made by doping a monocrystalline silicon substrate with boron. The second is a polysilicon resistor doped with phosphorous, over a silicon dioxide (SiO2). The analysis is made by mathematical model...

We have developed a process of growing ultrathin oxide on polysilicon layer by using Electron Cyclotron Resonance (ECR) N2O plasma. Sub-4 nm thick polyoxide on n+ and p+ polysilicon layer were grown and characterized. The oxides have relatively large breakdown voltage, small electron trapping and QBD up to 7 C/ for polyoxide on p+ cm2 polysilicon and up to 5 C/ for polyoxide on n+ polysilicon u...

This work is devoted to establishing the effect of using rapid thermal processing (RTP) method (450 °C, 7 s) form an ohmic contact between two layers aluminum metallization on electrical parameters and reliability integrated circuits. The resistance values chains aluminum-silicon, aluminum-polysilicon, polysilicon-silicon n+, aluminum-silicon current-voltage characteristics tested bipolar trans...

design and optimization of a single crystalline silicon (c-si) solar cell is performed to achieve the maximum light conversion efficiency. various parameters such as doping concentration and thicknesses, and geometrical dimension of surface pyramids are studied. the inverted surface pyramid is used to increase the efficiency of the solar cell, and engineered oxide layer is used as the passivati...

ESD protection in RF integrated circuits has several considerations: low parasitic capacitance, constant input capacitance, and insensitive to substrate coupling noise. In this paper, a new ESD protection design with polysilicon diodes for RF IC applications is proposed and characterized. The proposed polysilicon diode is constructed by polysilicon layer in a general CMOS process with a central...