A novel on-chip electrostatic discharge (ESD) protection design by using polysilicon diodes as the ESD clamp devices in CMOS process is first proposed in this paper. Different process splits have been experimentally evaluated to find the suitable doping concentration for optimizing the polysilicon diodes for both on-chip ESD protection design and the application requirements of the smart-card I...

With the ultimate goal of creating autonomous microrobots, we have developed a new five-mask process that combines two polysilicon structural layers with 35 μm thick SOI structures and a backside substrate etch. The polysilicon layers provide 3D hinged structures, high compliance structures, and electrical wiring. The SOI structural layer yields much stronger structures and large-force actuator...

P-type and N-type multi-gate vertical thin film transistors (vertical TFTs) have been fabricated, adopting the low-temperature (T ≤ 600°C) polycrystalline silicon (polysilicon) technology. Stacked heavily-doped polysilicon source and drain are electrically isolated by an insulating barrier. Multi-teeth configuration is defined by reactive ion etching leading to sidewalls formation on which undo...

We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF6 as the precursor. With selective CVD, the process is self-limiting whereby the tungsten formati...

This paper reports on polysilicon piezo-resistors that are fabricated at a low thermal budget using aluminium-induced-crystallization (AIC) of ultra-high-vacuum e-beam evaporated silicon films. By in-situ phosphorus doping of precursor amorphous silicon films e-beam evaporated at room temperature on aluminium layer, we are able to increase and control the gauge factor of the polysilicon films f...

A one-dimensional model of the polysilicon-gate-oxide-bulk structure is presented in order to analyze the implanted gate MOS-devices. The influence of the ionized impurity concentration in the polysilicon-gate near the oxide and the charge at the polysilicon-oxide interface on the flat-band voltage, threshold voltage, inversion layer charge and the quasi-static C-V characteristic is quantitativ...

We fabricated and measured the optical loss of polysilicon waveguides deposited using hot-wire chemical vapor deposition at a temperature of 240°C. A polysilicon film 220 nm thick was deposited on top of a 2000 nm thick plasma-enhanced chemical vapor deposition silicon dioxide layer. The crystalline volume fraction of the polysilicon film was measured by Raman spectroscopy to be 91%. The optica...

It is well established that supercritical fluids such as supercritical CO2 are dense fluids that do not demonstrate the often detrimental surface tensions and interfacial phenomena exhibited by other liquids. Supercritical CO2 has hence become widely used in the microelectromechanical systems (MEMS) industry to dry release devices while avoiding the liquid-vapor interface that can cause the cap...

The self-assembling of three-dimensional (3-D) MEMS from polysilicon surface micromachined part is very attractive. To avoid risky external manipulation, the practical use of integrated actuator to perform the assembling task is required. To that goal, this paper presents detailed characteristics of the electrostatic surface micromachined scratch drive actuator (SDA). First, from numerous SDA t...