نتایج جستجو برای: phototransistor

تعداد نتایج: 205  

2012
C. M. M. Paschoal M. L. Sobrinho D. do N. Souza J. Antônio Filho L. A. P. Santos

Computed tomography (CT) dosimetry normally uses an ionization chamber 100 mm long to estimate the computed tomography dose index (CTDI), however some reports have already indicated that small devices could replace the long ion chamber to improve quality assurance procedures in CT dosimetry. This paper presents a novel dosimetry system based in a commercial phototransistor evaluated for CT dosi...

2017
Junku Liu Nan Guo Xiaoyang Xiao Kenan Zhang Yi Jia Shuyun Zhou Yang Wu Qunqing Li Lin Xiao

In this study, we fabricate air-stable p-type multi-layered MoTe2 phototransistor using Au as electrodes, which shows pronounced photovoltaic response in off-state with asymmetric contact form. By analyzing the spatially resolved photoresponse using scanning photocurrent microscopy, we found that the potential steps are formed in the vicinity of the electrodes/MoTe2 interface due to the doping ...

2016
Wai Son Ko Indrasen Bhattacharya Thai-Truong D. Tran Kar Wei Ng Stephen Adair Gerke Connie Chang-Hasnain

Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitan...

Journal: :Chemical communications 2014
Hui Li Yishi Wu Xuedong Wang Qinghua Kong Hongbing Fu

The π-conjugated polymer, PQBOC8, can be easily assembled into a large-area crystalline ultrathin film at the CHCl3/water interface. A phototransistor based on this ultrathin film showed a large photoresponsivity of 970 A W(-1), and a photocurrent/dark current ratio of 1.36 × 10(4) under a very low white light irradiation.

Journal: :Journal of Electronics and Informatics 2020

Journal: :Advanced electronic materials 2023

Novel anti-ambipolar transistors (AATs) are gate tunable rectifiers with a marked potential for multi-valued logic circuits. In this work, the optoelectronic applications of AATs in cryogenic conditions studied, which AAT devices consist vertically stacked p-SnS and n- MoSe2 nanoflakes to form type-II staggered band alignment. An electrostatically p-SnS/n-MoSe2 cryo-phototransistor is presented...

Journal: :Chemical communications 2011
Youn Sun Kim Suk Young Bae Kyung Hwan Kim Tae Wan Lee Jung A Hur Mai Ha Hoang Min Ju Cho Sung-Jin Kim Youngmee Kim Minsik Kim Kwangyeol Lee Suk Joong Lee Dong Hoon Choi

A new pyrene-cored π-conjugated molecule has been synthesized through Sonogashira coupling reaction. The single-crystalline microribbon-based FET exhibited the highest mobility of 0.7 cm(2) V(-1) s(-1) (I(on)/I(off) > 10(6)). Single-crystalline microribbons were employed to operate in an organic phototransistor (OPT) under very low light intensity (I = 5.6 μW cm(-2)).

Journal: :DENKI-SEIKO[ELECTRIC FURNACE STEEL] 1968

Journal: :Indonesian Journal of Electrical Engineering and Computer Science 2023

<span>Phototransistors are attractive devices for applications in optical fiber telecommunication systems. They used the detection of signals and amplification these signals. This paper presents an investigation how technological parameters indium phosphide (InP)/indium gallium arsenide (InGaAs) heterojunction bipolar phototransistor can impact its responsivity at two wavelengths, 1310 nm...

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