Highly-integrated multi-functional optoelectronic chip for next generation optical networks Department of Elec Email We introduce a novel, highly-integrate optoelectronic microchip that allows wavelength conversion, multi-waveleng regeneration and switching. This device r optical-electrical-optical conversion for alleviating the problems of high compon costs, large space and high power consu sc...

The thin-film vapor−liquid−solid (TF-VLS) growth technique presents a promising route for high quality, scalable, and cost-effective InP thin films for optoelectronic devices. Toward this goal, careful optimization of material properties and device performance is of utmost interest. Here, we show that exposure of polycrystalline Zn-doped TF-VLS InP to a hydrogen plasma (in the following referre...

A smart-pixel array is a two-dimensional array of optoelectronic devices that combine optical inputs and outputs with electronic processing circuitry. A field-programmable smart-pixel array (FP-SPA) is a smart-pixel array capable of having its electronic functionality dynamically programmed in the field. Such devices could be used in a diverse range of applications, including optical switching,...

Light management is of paramount importance to improve the performance of optoelectronic devices including photodetectors, solar cells, and light-emitting diodes. Extensive studies have shown that the efficiency of these optoelectronic devices largely depends on the device structural design. In the case of solar cells, three-dimensional (3-D) nanostructures can remarkably improve device energy ...

We study the process of diffusive conduction that we use in our optoelectronic switches to achieve rapid optical switching on a picosecond time scale . We present the characteristic Green’s function of the diffusive conduction derived for arbitrary initial conditions. We also report the series solutions of the diffusive conduction obtained for different boundary conditions V=0 and V=0 along the...

In this paper we present a manufacturable InP/InGaAs SHBT technology suitable for monolithic integration of highdata-rate optical receivers. We investigated the fabricated SHBT and found that they are essentially insensitive to processing variations. The satisfactory device yield and uniform device performance in a research laboratory environment suggested the robustness of InP-based SHBT techn...

A symmetric gain optoelectronic mixer based on an indium gallium arsenide (In0.53Ga0.47As)/indium phosphide (InP) symmetric heterojunction phototransistor structure is being investigated for chirpedAM laser detection and ranging (LADAR) systems operating in the ‘‘eye-safe” 1.55 lm wavelength range. Signal processing of a chirped-AM LADAR system is simplified if the photodetector in the receiver...