Abstract We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for effects at low power, decrease conductance semiconductors when lattice temperature increases, makes necessary use dependent models. Moreover, order correctly steep increase GaN devices high temperature, where commonly used models fail, we propose non-linear model w...

Abstract Edge computing, a distributed computing architecture within the knowledge-defined network (KDN), faces challenges due to significant disparities and data heterogeneity among its nodes, hindering their interaction. Ontology, solution Semantic Web, is well-suited for addressing matching ontologies effectively. However, ontology presents difficulties non-linear mathematical issues. To ove...

In this work, we report the realization of a polarization-insensitive grating coupler, single-mode waveguide, and ring resonator in GaN-on-Sapphire platform. We provide detailed demonstration material characterization, device simulation, experimental results. achieve coupler efficiency -5.2 dB/coupler with 1dB 3dB bandwidth 40 nm 80 nm, respectively. measure waveguide loss -6 dB/cm. The losses ...

Conventional high electron mobility transistors (HFETs) based on AlGaN/GaN heterostructures have been accurately modeled and the results are described in this paper. The Schroedinger's equation and the Poisson's equation have been solved self-consistently in order to obtain a relationship between the sheet carrier density and the applied gate voltage. The relationship is treated using a non-lin...

Intra prediction is a vital part of the image/video coding framework, which designed to remove spatial redundancy within picture. Based on set predefined linear combinations, traditional intra cannot cope with blocks irregular textures. To tackle this drawback, in article, we propose Generative Adversarial Network (GAN)-based approach enhance accuracy. Specifically, superior non-linear fitting ...

In this paper, a simple non-linear analytical charge control model for the DC and microwave characteristics of AlGaN/GaN MODFET is presented. The effect of parasitic resistances s R and d R is also incorporated. The model has also been extended to obtain the expressions for transconductance, drain conductance and cut-off frequency of the device. The model predicts a high transconductance of 502...

A multi-faceted study on the reduction of ohmic contact resistance to AlN/GaN-based heterostructures is presented. Minimum contact resistance of 0.5 X mm has been achieved by partially etching the AlN barrier layer using a chlorine-based plasma dry-etch prior to ohmic contact metallization. For thin GaNcapped AlN/GaN heterostructures, we find it is necessary to remove the GaN cap in the vicinit...