In this paper, we have carried out a numerical simulation of FinFETs. The model is based on 1D non-equilibrium Green’s function (NEGF) along the channel and 2-D Schrödinger equation in the confined cross section and provides insights into the performance of FinFETs with ultra small channel cross section. The simulation results of FinFETs show normal I-V characteristics with great potential in s...

For a molecule moving near a single metal surface at equilibrium, following von Oppen and coworkers [N. Bode, S. V. Kusminskiy, R. Egger, and F. von Oppen, Beilstein J. Nanotechnol. 3, 144 (2012)] and using a nonequilibrium Green’s-function (NEGF) approach, we derive a very general form of electronic friction that includes non-Condon effects. We then demonstrate that the resulting NEGF friction...

Through the Non-Equilibrium Green’s Function (NEGF) formalism, quantumscale device simulation can be performed with the inclusion of electron-phonon scattering. However, the simulation of realistically sized devices under the NEGF formalism typically requires prohibitive amounts of memory and computation time. Two of the most demanding computational problems for NEGF simulation involve mathemat...

The recent fabrication of graphene nanoribbon GNR field-effect transistors poses a challenge for firstprinciples modeling of carbon nanoelectronics due to many thousand atoms present in the device. The state of the art quantum transport algorithms, based on the nonequilibrium Green function formalism combined with the density-functional theory NEGF-DFT , were originally developed to calculate s...

We present an efficient approach to study the carrier transport in graphene nanoribbon (GNR) devices using the non-equilibrium Green's function approach (NEGF) based on the Dirac equation calibrated to the tight-binding π-bond model for graphene. The approach has the advantage of the computational efficiency of the Dirac equation and still captures sufficient quantitative details of the bandstr...

The graphene-based Field Effect Transistors (GFETs), due to their multi-parameter characteristics, are growing rapidly as an important detection component for the apt of disease biomarkers, such DNA, in clinical diagnostics and biomedical research laboratories. In this paper, non-equilibrium Green function (NEGF) is used create a compact model GFET ballistic regime building block DNA sensors. p...

Recent studies of wide band-gap diamond field emission devices have realized superior performance and lifetime. However, theoretical studies using standard Fowler-Nordheim (FN) theory do not fully capture the physics of diamond semiconductor emitters as a result of the fitting parameters inherent to the FN approximation. The following research computationally models wide band-gap field emission...

The HF-GKBA offers an approximate numerical procedure for propagating the two-time non-equilibrium Green's function(NEGF). Here we compare to exact results a variety of systems with long and short-range interactions, different two-body interaction strengths various preparations. We find excellent agreement between time evolution in models when more realistic long-range exponentially decaying in...

Abstract In semi-classical transport, it has become common practice over the past few decades to use ensemble Monte Carlo methods for simulation of transport in semiconductor devices. This method utilizes particles while still addressing full physics within device, leaving computational difficulties computer. More recently, study quantum mechanical effects devices, have important, and been addr...

This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green’s Functions (NEGF) formalism and the variational form of the problem is solved using the finite element method (FEM). In this approach, the derivation of the boundary conditions at the in...