نتایج جستجو برای: nitride semiconductors
تعداد نتایج: 41330 فیلتر نتایج به سال:
Gallium Nitride and Related Wide-Bandgap Semiconductors (WBS) have constantly received a great amount of attention in recent years [...]
We report the realization and properties of a high-resolution solid-state self-emissive microdisplay based on III-nitride semiconductor micro-size light emitting diodes (lLEDs) capable of delivering video graphics images. The luminance level of III-nitride microdisplays is several orders of magnitude higher than those of liquid crystal and organic-LED displays. The pixel emission intensity was ...
Due to its large in-plane thermal conductivity, high temperature and chemical stability, large energy band gap (~ 6.4 eV), hexagonal boron nitride (hBN) has emerged as an important material for applications in deep ultraviolet photonic devices. Among the members of the III-nitride material system, hBN is the least studied and understood. The study of the electrical transport properties of hBN i...
In this study interaction of phenothiazine sulfur dye with (5, 5) armchair open-end boron nitride nanotubes (BNNTs) in interaction (with a length of 7 Å) was investigated. The impacts of the estereoelectronic effect associated with donor-acceptor electron delocalizations, dipole-dipole interactions and total steric exchange energies on the structural and electronic properties and reactivity of ...
A new dimension: The doping of amorphous poly(triazine imide) (PTI) through ionothermal copolymerization of dicyandiamide with 4-amino-2,6-dihydroxypyrimidine (4AP) results in triazine-based carbon nitrides with increased photoactivity for water splitting compared to crystalline poly(triazine imide) (PTI/Li(+)Cl(-), see picture) and melon-type carbon nitrides. This family of carbon nitride semi...
Surface x-ray diffraction experiments reveal that, in cobalt-doped ZnO films two to five monolayers thick, Wurtzite-type CoO nanocrystals are coherently embedded within a hexagonal boron-nitride- (h-BN)-type ZnO matrix, supporting the model of a phase separation. First-principles calculations confirm that, in contrast with ZnO, the formation of h-BN-type CoO is unfavorable in the ultrathin film...
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