In this paper, the structure of SAW has been studied. In previous work in SAW, materials such as lithium niobium, lithium tantalite and gallium nitride were used in the structure of SAW, and thus had a low operating frequency and the highest reported operating frequency was about 4 GHz. In this paper, aluminum nitride and gallium nitride in the SAW structure are used in combination. The electro...

To extend the scaling limit of thermal SiO2 in the ultrathin regime when the direct tunneling current becomes significant, members of this author’s research team at Yale University, in collaboration with the Jet Process Corporation, embarked on a program to explore the potential of silicon nitride as an alternative gate dielectric. In this paper, highquality silicon nitride (or oxynitride) film...

In this paper, we present our main results on the structural and optical properties of light-emitting amorphous silicon nitride (SiNx) films fabricated by reactive magnetron cosputtering. In particular, we discuss the origin of the visible emission in amorphous silicon nitride films and investigate the optical emission properties of Erbium-doped amorphous silicon nitride (Er:SiNx). The mechanis...

Low pressure chemical vapor deposition ~LPCVD! of silicon nitride from bis~tertiary-butylamino!silane ~BTBAS! and ammonia precursors has been demonstrated at 550-600°C in a 200 mm vertical batch furnace system. Deposition rates of 4-30 Å/min are achieved with a film thickness variation below 2% 1-sigma. Silicon nitride depositions using BTBAS and NH3 were found to retain a significant mass-tran...

The stoichiometry and hydrogen content of hot-wire (HW)-grown silicon nitride was examined as a function of SiH yNH 4 3 flow ratio. The effect of post-deposition hydrogenation treatment on overall film hydrogen content was determined. The hydrogen release properties in Si-rich and N-rich nitride layers were characterized by annealing treatments. Defect hydrogenation was studied using Fourier tr...

6-amino-1,2,4-triazolo[4,3-b][1,2,4,5]tetrazine (attz)is an explosive material, that has been synthesized from the reaction of 3,6-diaminotetrazine , with nitrous acid and then sodium azide. in the simplest terms, an explosive is defined as a substance, which on initiation by friction, impact, shock, spark, flame, heating, or any simple application of an energy pulse, undergoes a rapid chemical...

Description: The development of nitride-based light-emitting diodes (LEDs) has led to advancements in high-brightness LED technology for solid-state lighting, handheld electronics, and advanced bioengineering applications. Nitride Semiconductor Light-Emitting Diodes (LEDs) reviews the fabrication, performance, and applications of this technology that encompass the state-of-the-art material and ...

Silicon nitride is a biocompatible material that is currently used as an interfacial surface between cells and large-scale integration devices incorporating ion-sensitive field-effect transistor technology. Here, we investigated whether a poly-L-lysine coated silicon nitride surface is suitable for the culture of PC12 cells, which are widely used as a model for neural differentiation, and we ch...

We studied the effect of dopants (Al, Ti, Zr) on the thermal stability of iron-nitride thin films prepared using a dc magnetron sputtering technique. Structure and magnetic characterization of deposited samples reveal that the thermal stability together with soft magnetic properties of iron-nitride thin films get significantly improved with doping. To understand the observed results, detailed F...

Boron nitride (BN)-based nanomaterials attract considerable attention due to their unique properties. In this study, we found that sonication treatment of multiwalled boron nitride nanotubes (BNNTs) in primary alcohols had led to chemical peeling of their sidewalls through alcoholysis, thereby producing boron nitride nanoribbons (BNNRs).